Hasil untuk "cs.SI"

Sha Peng, Cheng-Mei Qi, Li-Mei Duan et al.

A four-component reaction involving alkenes, CS2, amines, and DMTSM towards S-alkyl dithiocarbamates has been readily developed.

Feifei Lu, Lei Liu, Jian Tian

В. Я. Шевченко, В.А. Блатов, Г.Д. Илюшин

Проведен геометрический и топологический анализ металлооксида с минимальным известным содержанием кислорода CsO, образующегося из кислородсодержащего расплава металлического Cs. Для определения кластеров-прекурсоров кристаллических структур использованы специальные алгоритмы разложения структурных графов на кластерные субструктуры (пакет программ ToposPro). Определены участвующие в самосборке кристаллических структур кластеры-прекурсоры: трехоктаэдрические кластеры CsO, октаэдрические кластеры Cs, тетраэдрические кластеры Cs. Реконструированы симметрийный и топологический коды процессов самосборки кристаллических структур из кластеров-прекурсоров в виде: первичная цепь микрослой микрокаркас.

Mieko Arisawa, Yoko Tagami, Masahiko Yamaguchi

Qian Wang, Yifan Shen, Kang Dai

A. R. Chanbasha, A. T. S. Wee

Abstract This study examines the dependence of the sputter rate and the transient width ( z tr ) as a function of Cs + primary ion energy (impact energy ( E p ) = 320 eV, 500 eV and 1 keV) and incident angles between 0 and 70° . The instrument used was the ATOMIKA 4500 SIMS depth profiler and the sample was Si with ten delta layers of Si 0.7 Ge 0.3 . We observed the narrowest transient widths of between 1.4 and 2.0 nm apparent depth. This was achieved at incident angles (θ) of 30–50° . An extended transient effect was observed when profiled at θ > 50° . Below this incident angle, the transient width is less than twice the penetration depth ( z tr < 2 R norm ). At minimum z tr , z tr ≈ R norm . The detection sensitivity is best achieved at θ ≈ 30° for all energies investigated. The sputter rate is lowest at normal incidence, rising gradually to a maximum at θ ≈ 50–60° . This is similar to that observed with ultralow‐energy O 2 + primary ion beams. At ultralow energies, reducing E p does not have a significant effect in reducing z tr . We conclude that for E p < 1 keV, the optimum condition to achieve minimum z tr while maintaining good sensitivity and high sputter rate is at θ ≈ 30° . Copyright © 2007 John Wiley & Sons, Ltd.

Hiroshi Tochihara, Masakazu Kubota, Yoshitada Murata

M.C. Yang, C. Kim, H.W. Lee et al.

Isabelle Georg, Michael Bolte, Matthias Wagner et al.

Abstract The λ 6Si-silicate [Cs(18-crown-6)]2[Si(OSO2CH3)6] (1) was synthesized by treatment of Si2Cl6 with Cs[OSO2CH3] in the presence of 18-crown-6. Compound 1 is the first example of a λ 6Si-silicate with a methanesulfonate ligand. It was characterized by NMR spectroscopy and by single-crystal X-ray diffraction. The solid-state structure of 1 consists of discrete [Si(OSO2CH3)6]2– anions and two [Cs(18-crown-6)]+ cations (triclinic space group, P 1 ¯ $P\overline{1}$ , Z = 1).

H P Lenka, B Joseph, P K Kuiri et al.

A. H. Sommer, H. H. Whitaker, B. F. Williams

The Cs content of GaAs(Cs) and GaAs(Cs–O) photocathodes was determined by direct chemical analysis. The surface films were found to be of monolayer dimension. From this result, it is concluded that the effect of these films on electron emission is probably not associated with the bulk properties of cesium oxide.

Peter Williams, Charles A. Evans

Depth profiles of As-implanted silicon samples have been determined by secondary ion mass spectrometry in order to establish a practical detection limit for As in Si. By monitoring the AsSi− species, produced in high yield by Cs+ ion bombardment, it is shown that As is detectable down to a background count limit of ∼3×1015 atom cm−3 (50 ppb) during a depth profile of a 250-μm square area.

Ku LP, the ARIES-CS Team

B. Sulik, K. Tok?si, K. Tok?si et al.