Surface transient effects in ultralow‐energy Cs <sup>+</sup> sputtering of Si
Abstrak
Abstract This study examines the dependence of the sputter rate and the transient width ( z tr ) as a function of Cs + primary ion energy (impact energy ( E p ) = 320 eV, 500 eV and 1 keV) and incident angles between 0 and 70° . The instrument used was the ATOMIKA 4500 SIMS depth profiler and the sample was Si with ten delta layers of Si 0.7 Ge 0.3 . We observed the narrowest transient widths of between 1.4 and 2.0 nm apparent depth. This was achieved at incident angles (θ) of 30–50° . An extended transient effect was observed when profiled at θ > 50° . Below this incident angle, the transient width is less than twice the penetration depth ( z tr < 2 R norm ). At minimum z tr , z tr ≈ R norm . The detection sensitivity is best achieved at θ ≈ 30° for all energies investigated. The sputter rate is lowest at normal incidence, rising gradually to a maximum at θ ≈ 50–60° . This is similar to that observed with ultralow‐energy O 2 + primary ion beams. At ultralow energies, reducing E p does not have a significant effect in reducing z tr . We conclude that for E p < 1 keV, the optimum condition to achieve minimum z tr while maintaining good sensitivity and high sputter rate is at θ ≈ 30° . Copyright © 2007 John Wiley & Sons, Ltd.
Penulis (2)
A. R. Chanbasha
A. T. S. Wee
Akses Cepat
- Tahun Terbit
- 2007
- Bahasa
- en
- Total Sitasi
- 4×
- Sumber Database
- CrossRef
- DOI
- 10.1002/sia.2541
- Akses
- Open Access ✓