CrossRef 1977 39 sitasi

Depth profile detection limit of 3×1015 atom cm−3 for As in Si using Cs+ bombardment negative secondary ion mass spectrometry

Peter Williams Charles A. Evans

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Abstrak

Depth profiles of As-implanted silicon samples have been determined by secondary ion mass spectrometry in order to establish a practical detection limit for As in Si. By monitoring the AsSi− species, produced in high yield by Cs+ ion bombardment, it is shown that As is detectable down to a background count limit of ∼3×1015 atom cm−3 (50 ppb) during a depth profile of a 250-μm square area.

Penulis (2)

Peter Williams

Charles A. Evans

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Williams, P., Evans, C.A. (1977). Depth profile detection limit of 3×1015 atom cm−3 for As in Si using Cs+ bombardment negative secondary ion mass spectrometry. https://doi.org/10.1063/1.89259

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Informasi Jurnal

Tahun Terbit: 1977
Bahasa: en
Total Sitasi: 39×
Sumber Database: CrossRef
DOI: 10.1063/1.89259
Akses: Terbatas