Hasil untuk "physics.soc-ph"

M. Kühl, Y. Cohen, T. Dalsgaard et al.

Kangtaek Lee, S. Asher

Mingchun Zhao, M. Liu, G. Song et al.

A. Pol, K. Heijmans, H. Harhangi et al.

D. Bhumkar, V. Pokharkar

M. Kosmulski

Eun Seong Lee, Zhong-gao Gao, Dongin Kim et al.

M. Peñalva, J. Tilburn, E. Bignell et al.

M. Gilar, Petra Olivova, Amy E Daly et al.

Mubarak Ali, P. Ramirez, S. Mafe et al.

S. Roche, S. Bressanelli, F. Rey et al.

S. Angelos, N. Khashab, Yingwei Yang et al.

Partha P. Gopmandal, H. Ohshima

L. Long

L. J. Nielsen, Samuel Eyley, W. Thielemans et al.

W. Fu, C. Nef, O. Knopfmacher et al.

We observe very small gate-voltage shifts in the transfer characteristic of as-prepared graphene field-effect transistors (GFETs) when the pH of the buffer is changed. This observation is in strong contrast to Si-based ion-sensitive FETs. The low gate-shift of a GFET can be further reduced if the graphene surface is covered with a hydrophobic fluorobenzene layer. If a thin Al-oxide layer is applied instead, the opposite happens. This suggests that clean graphene does not sense the chemical potential of protons. A GFET can therefore be used as a reference electrode in an aqueous electrolyte. Our finding sheds light on the large variety of pH-induced gate shifts that have been published for GFETs in the recent literature.

R. V. Benjaminsen, Honghao Sun, J. Henriksen et al.

Xiu‐Jun Yu, K. McGourty, Mei Liu et al.

Christine Martin, S. Pedersen, A. Schwab et al.

Dong-Hoon Kim, Sang‐Hyoun Kim, K. Jung et al.