Hasil untuk "physics.med-ph"

Tung-Ming Pan, Yu-Shu Huang, Jim-Long Her

P. Beena, K. P. Jose

Abstract The paper comprises an (s,S) production inventory facility in which multiple vacations and varying service rates are considered for the multiple servers. The arrival of customers constitutes a Markovian Arrival Process (MAP) and service completion times follow the phase type distributions with representations ( α, S ) and ( β, T ) respectively. Manufacturing needs to begin at the moment when the stock position falls to s. Service is offered at a lower rate if the stock level ranges from 0 to s and the service time distribution has the representations (α, η 1 S) and (β, η 2 T ), 0 < η 1, η 2 < 1 respectively. If the stock level reaches the maximum S, production is ceased to operate. 1-limited service policy, Bernoulli service schedule, and Exhaustive service disciplines are considered for the servers. A suitable cost function is outlined as per performance assessment. The impact of negative correlated inter arrival times on cost function is illustrated. Also, a relative study of expected cost function on different service modes is presented.

Jung-Chuan Chou, Chen-Yu Weng

Cassandra Willyard

S. Kundu, A. Datta, S. Hazra

Saskia A. Van De Merwe, Adriaan P. Van Den Berg, Jacoba Van Der Zee et al.

J.L. Alonso, Ph. Boucaud, F. Lesmes et al.

C. Alexandrou, Ph. de Forcrand, A. Tsapalis

I. Kaya, B. Karademir, O. Ucar

H. Jeremie, Ph. Martin, A. Calamand

C. Alexandrou, Ph. de Forcrand, M. D'Elia et al.

Ph. Blanchard, J. Rezende

Stuart Wolf, Jiwei Lu, Erin Fitzgerald

Ph. Gondoin

R. Haı̈dar, A. Mustelier, Ph. Kupecek et al.

Largely tunable midinfrared (8–12 μm) generation is obtained in GaAs and ZnSe slabs by difference frequency mixing of optical parametric oscillator output waves (∼2 μm). The coherence lengths determined in semiconductor wedges are in excellent agreement with estimates from known Sellmeir formulas.

Ph. Bove, J. Ch. Garcia, Ph. Maurel et al.

We report in this letter the sulfur doping of GaAs and Ga0.5In0.5P layers grown by metalorganic molecular beam epitaxy using a 1000 ppm hydrogen sulfide diluted in hydrogen dopant source. No precracking of H2S molecules is necessary to achieve efficient doping. The n-type doping level of both GaAs and Ga0.5In0.5P is proportional to the input H2S flow rate. Maximum doping levels of 8×1017 and 3×1018 cm−3 are measured in GaAs and Ga0.5In0.5P, respectively, with no saturation in either material within the doping range investigated. The doping level decreases as the growth temperature increases, with activation energies of 1.5 and 1.7 eV for GaAs and Ga0.5In0.5P, respectively. The sulfur incorporation decreases on increasing the V/III ratio in GaAs. The opposite behavior occurs in Ga0.5In0.5P.

E. Rosencher, F. Luc, L. Thibaudeau et al.

F. AFFOUARD, PH. DEPONDT

J. Ph. Steller

Ph. Becker