CrossRef 2002 17 sitasi

Largely tunable midinfrared (8–12 μm) difference frequency generation in isotropic semiconductors

R. Haı̈dar A. Mustelier Ph. Kupecek E. Rosencher R. Triboulet +2 lainnya

Abstrak

Largely tunable midinfrared (8–12 μm) generation is obtained in GaAs and ZnSe slabs by difference frequency mixing of optical parametric oscillator output waves (∼2 μm). The coherence lengths determined in semiconductor wedges are in excellent agreement with estimates from known Sellmeir formulas.

Penulis (7)

R

R. Haı̈dar

A

A. Mustelier

P

Ph. Kupecek

E

E. Rosencher

R

R. Triboulet

P

Ph. Lemasson

G

G. Mennerat

Format Sitasi

Haı̈dar, R., Mustelier, A., Kupecek, P., Rosencher, E., Triboulet, R., Lemasson, P. et al. (2002). Largely tunable midinfrared (8–12 μm) difference frequency generation in isotropic semiconductors. https://doi.org/10.1063/1.1435412

Akses Cepat

Lihat di Sumber doi.org/10.1063/1.1435412
Informasi Jurnal
Tahun Terbit
2002
Bahasa
en
Total Sitasi
17×
Sumber Database
CrossRef
DOI
10.1063/1.1435412
Akses
Terbatas