Hasil untuk "cond-mat.mes-hall"

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arXiv Open Access 2025
Thermoelectric effect at the quantum Hall-superconductor interface

Jordan T. McCourt, John Chiles, Chun-Chia Chen et al.

The interfaces of quantum Hall insulators with superconductors have emerged as a promising platform to realise interesting physics that may be relevant for topologically protected quantum computing. However, these interfaces can host other effects which obscure the detection of the desired excitations. Here we present measurements of the thermoelectric effect at the quantum Hall-superconductor interface. We explain the heat transport by considering the formation of a hotspot at the interface, which results in a non-equilibrium distribution of electrons that can propagate across the superconductor through vortex cores. The observed thermoelectric effect results in a voltage which changes sign on quantum Hall plateaus and responds to the rearrangement of vortices in the wire. These observations highlight the complex interplay of thermal and charge phenomena at the quantum Hall -- superconductor interfaces and should be considered when interpreting transport measurements in similar systems.

en cond-mat.mes-hall, cond-mat.supr-con
arXiv Open Access 2024
Orbital Hall Responses in Disordered Topological Materials

Luis M. Canonico, Jose H. García, Stephan Roche

We report an efficient numerical approach to compute the different components of the orbital Hall responses in disordered topological materials from the Berry phase theory of magnetization. The theoretical framework is based on the Chebyshev expansion of Green's functions and the off-diagonal elements of the position operator for systems under arbitrary boundary conditions. The capability of this scheme is shown by computing the orbital Hall conductivity for gapped graphene and the Haldane model in the presence of nonperturbative disorder effects. This methodology enables realistic simulations of orbital Hall responses in highly complex models of disordered materials.

en cond-mat.mes-hall, cond-mat.dis-nn
arXiv Open Access 2024
Quantum anomalous, spin, and valley Hall effects in pentalayer rhombohedral graphene moiré superlattices

Koji Kudo, Ryota Nakai, Kentaro Nomura

Recent experiments on pentalayer rhombohedral graphene moiré superlattices have observed the quantum anomalous Hall effect at moiré filling factor of $ν= 1$ and various fractional values. These phenomena are attributed to a flat Chern band induced by electron-electron interactions. In this study, we demonstrate that at $ν= 2$, many-body effects can lead to the emergence of quantum spin Hall and quantum valley Hall states, in addition to the quantum anomalous Hall state, even in the absence of spin-orbit coupling or valley-dependent potentials. These three topological states can be selectively induced by the application and manipulation of a magnetic field. Furthermore, we show that at $ν= 3$ and $4$, the ground state can be a combination of topologically trivial and nontrivial states, unlike the cases of $ν=1$ and 2. This contrasts with the conventional quantum Hall effect in graphene where the ground state at filling factor $ν$ is given as the particle-hole counterpart at $4-ν$.

en cond-mat.str-el, cond-mat.mes-hall
arXiv Open Access 2022
Electrical measurement of the Spin Hall Effect isotropy in a ferromagnet

M. Cosset-Chéneau, M. Husien Fahmy, A. Kandazoglou et al.

The spin-dependent transport properties of paramagnetic metals are roughly invariant under rotation. By contrast, in ferromagnetic materials the magnetization breaks the rotational symmetry, and thus the spin Hall effect is expected to become anisotropic. Here, using a specific design of lateral spin valves, we measure electrically the spin Hall Effect anisotropy in NiCu and NiPd, both in their ferromagnetic and paramagnetic phases. We show that the appearance of the ferromagnetic order does not lead to a sizeable anisotropy of the spin charge interconversion in these materials.

en cond-mat.mtrl-sci, cond-mat.mes-hall
arXiv Open Access 2020
Classification of fractional quantum Hall states with spatial symmetries

Naren Manjunath, Maissam Barkeshli

Fractional quantum Hall (FQH) states are examples of symmetry-enriched topological states (SETs): in addition to the intrinsic topological order, which is robust to symmetry breaking, they possess symmetry-protected topological invariants, such as fractional charge of anyons and fractional Hall conductivity. In this paper we develop a comprehensive theory of symmetry-protected topological invariants for FQH states with spatial symmetries, which applies to Abelian and non-Abelian topological states, by using a recently developed framework of $G$-crossed braided tensor categories ($G\times$BTCs) for SETs. We consider systems with $U(1)$ charge conservation, magnetic translational, and spatial rotational symmetries, in the continuum and for all $5$ orientation-preserving crystalline space groups in two dimensions, allowing arbitrary rational magnetic flux per unit cell, and assuming that symmetries do not permute anyons. In the crystalline setting, applicable to fractional Chern insulators and spin liquids, symmetry fractionalization is fully characterized by a generalization to non-Abelian states of the charge, spin, discrete torsion, and area vectors, which specify fractional charge, angular momentum, linear momentum, and fractionalization of the translation algebra for each anyon. The topological response theory contains $9$ terms, which attach charge, linear momentum, and angular momentum to magnetic flux, lattice dislocations, disclinations, corners, and units of area. Using the $G\times$BTC formalism, we derive the formula relating charge filling to the Hall conductivity and flux per unit cell; in the continuum this relates the filling fraction and the Hall conductivity without assuming Galilean invariance. We provide systematic formulas for topological invariants within the $G\times$BTC framework; this gives, for example, a new categorical definition of the Hall conductivity.

en cond-mat.str-el, cond-mat.mes-hall
arXiv Open Access 2019
Thermoelectric response and entropy of fractional quantum Hall systems

D. N. Sheng, Liang Fu

We study thermoelectric transport properties of fractional quantum Hall systems based on exact diagonalization calculation. Based on the relation between thermoelectric response and thermal entropy, we demonstrate that thermoelectric Hall conductivity $α_{xy}$ has powerlaw scaling $α_{xy} \propto T^η$ for gapless composite Fermi-liquid states at filling number $ν=1/2$ and $1/4$ at low temperature ($T$), with exponent $η\sim 0.5$ distinctly different from Fermi liquids. The powerlaw scaling remains unchanged for different forms of interaction including Coulomb and short-range ones, demonstrating the robustness of non-Fermi-liquid behavior at low $T$. In contrast, for $1/3$ fractional quantum Hall state, $α_{xy}$ vanishes at low $T$ with an activation gap associated with neutral collective modes rather than charged quasiparticles. Our results establish a new manifestation of the non-Fermi-liquid nature of quantum Hall fluids at finite temperature.

en cond-mat.mes-hall, cond-mat.str-el
arXiv Open Access 2019
A mechanism for anomalous Hall ferromagnetism in twisted bilayer graphene

Nick Bultinck, Shubhayu Chatterjee, Michael P. Zaletel

We use a lowest Landau level model to study the recent observation of an anomalous Hall effect in twisted bilayer graphene. This effective model is rooted in the occurrence of Chern bands which arise due to the coupling between the graphene device and its encapsulating substrate. Our model exhibits a phase transition from a spin-valley polarized insulator to a partial or fully valley unpolarized metal as the bandwidth is increased relative to the interaction strength, consistent with experimental observations. In sharp contrast to standard quantum Hall ferromagnetism, the Chern number structure of the flat bands precludes an instability to an inter-valley coherent phase, but allows for an excitonic vortex lattice at large interaction anisotropy.

en cond-mat.str-el, cond-mat.mes-hall
arXiv Open Access 2019
Magnetohydrodynamics in graphene: shear and Hall viscosities

B. N. Narozhny, M. Schütt

Viscous phenomena are the hallmark of the hydrodynamic flow exhibited by Dirac fermions in clean graphene at high enough temperatures. We report a quantitative calculation of the electronic shear and Hall viscosities in graphene based on the kinetic theory combined with the renormalization group providing a unified description at arbitrary doping levels and non-quantizing magnetic fields. At charge neutrality, the Hall viscosity vanishes, while the field-dependent shear viscosity decays from its zero-field value saturating to a nonzero value in classically strong fields. Away from charge neutrality, the field-dependent viscosity coefficients tend to agree with the semiclassical expectation.

en cond-mat.mes-hall, cond-mat.mtrl-sci
arXiv Open Access 2017
Planar Hall effect in the Weyl semimetal GdPtBi

Nitesh Kumar, Satya N. Guin, Claudia Felser et al.

Observation of Weyl and Dirac Fermions in condensed matter systems is one of the most important discoveries. Among the very few available tools to characterize Weyl semimetals through electrical transport, negative magnetoresistance is most commonly used. Considering shortcomings of this method, new tools to characterize chiral anomaly in Weyl semimetals are desirable. We employ planar Hall effect as an effective technique in half Heusler Weyl semimetal GdPtBi to study chiral anomaly. This compound exhibits a large value of 1.5 mohm cm planar Hall resistivity at 2 K and in 9 T. Our analysis reveals that the observed amplitude is dominated by Berry curvature and chiral anomaly contributions. Through the angle dependent transport studies we establish that GdPtBi with relatively small orbital magnetoresistance is an ideal candidate to observe large planar Hall effect .

en cond-mat.mes-hall, cond-mat.mtrl-sci
arXiv Open Access 2014
Orbital angular momentum driven intrinsic spin Hall effect

Wonsig Jung, Dongwook Go, Hyun-Woo Lee et al.

We propose a mechanism of intrinsic spin Hall effect (SHE). In this mechanism, local orbital angular momentum (OAM) induces electron position shift and couples with the bias electric field to generate orbital Hall effect (OHE). SHE then emerges as a concomitant effect of OHE through the atomic spin-orbit coupling. Spin Hall conductivity due to this mechanism is estimated to be comparable to experimental values for heavy metals. This mechanism predicts the sign change of the spin Hall conductivity as the spin-orbit polarization changes its sign, and also correlation between the spin Hall conductivity and the splitting of the Rashba-type spin splitting at surfaces.

en cond-mat.mes-hall, cond-mat.mtrl-sci
arXiv Open Access 2010
Quantized Anomalous Hall Insulator in a Nanopatterned Two-Dimensional Electron Gas

Yongping Zhang, Chuanwei Zhang

We propose that a quantum anomalous Hall insulator (QAHI) can be realized in a nanopatterned two-dimensional electron gas (2DEG) with a small in-plane magnetic field and a high carrier density. The Berry curvatures originating from the in-plane magnetic field and Rashba and Dresselhaus spin-orbit coupling, in combination with a nanoscale honeycomb lattice potential modulation, lead to topologically nontrivial insulating states in the 2DEG without Landau levels. In the bulk insulating gaps, the anomalous Hall conductivity is quantized $-e^{2}/h$, corresponding to a finite Chern number -1. There exists one gapless chiral edge state on each edge of a finite size 2DEG.

en cond-mat.mtrl-sci, cond-mat.mes-hall
arXiv Open Access 2009
Disorder effect of resonant spin Hall effect in a tilted magnetic field

Zhan-Feng Jiang, Shun-Qing Shen, Fu-Chun Zhang

We study the disorder effect of resonant spin Hall effect in a two-dimension electron system with Rashba coupling in the presence of a tilted magnetic field. The competition between the Rashba coupling and the Zeeman coupling leads to the energy crossing of the Landau levels, which gives rise to the resonant spin Hall effect. Utilizing the Streda's formula within the self-consistent Born approximation, we find that the impurity scattering broadens the energy levels, and the resonant spin Hall conductance exhibits a double peak around the resonant point, which is recovered in an applied titled magnetic field.

en cond-mat.mes-hall, cond-mat.str-el
arXiv Open Access 2007
Universal quantized spin-Hall conductance fluctuation in graphene

Z. H. Qiao, J. Wang, Y. D. Wei et al.

We report a theoretical investigation of quantized spin-Hall conductance fluctuation of graphene devices in the diffusive regime. Two graphene models that exhibit quantized spin-Hall effect (QSHE) are analyzed. Model-I is with unitary symmetry under an external magnetic field $B\ne 0$ but with zero spin-orbit interaction, $t_{SO}=0$. Model-II is with symplectic symmetry where B=0 but $t_{SO} \ne 0$. Extensive numerical calculations indicate that the two models have exactly the same universal QSHE conductance fluctuation value $0.285 e/4π$ regardless of the symmetry. Qualitatively different from the conventional charge and spin universal conductance distributions, in the presence of edge states the spin-Hall conductance shows an one-sided log-normal distribution rather than a Gaussian distribution. Our results strongly suggest that the quantized spin-Hall conductance fluctuation belongs to a new universality class.

en cond-mat.mes-hall, cond-mat.dis-nn
arXiv Open Access 2007
Giant Intrinsic Spin and Orbital Hall Effects in Sr2MO4 (M=Ru,Rh,Mo)

H. Kontani, T. Tanaka, D. S. Hirashima et al.

We investigate the intrinsic spin Hall conductivity (SHC) and the d-orbital Hall conductivity (OHC) in metallic d-electron systems, by focusing on the t_{2g}-orbital tight-binding model for Sr2MO4 (M=Ru,Rh,Mo). The conductivities obtained are one or two orders of magnitude larger than predicted values for p-type semiconductors with 5% hole doping. The origin of these giant Hall effects is the ``effective Aharonov-Bohm phase'' that is induced by the d-atomic angular momentum in connection with the spin-orbit interaction and the inter-orbital hopping integrals. The huge SHC and OHC generated by this mechanism are expected to be ubiquitous in multiorbital transition metal complexes, which pens the possibility of realizing spintronics as well as orbitronics devices.

en cond-mat.str-el, cond-mat.mes-hall
arXiv Open Access 1999
Quantum Hall effect at low magnetic fields

Bodo Huckestein

The temperature and scale dependence of resistivities in the standard scaling theory of the integer quantum Hall effect is discussed. It is shown that recent experiments, claiming to observe a discrepancy with the global phase diagram of the quantum Hall effect, are in fact in agreement with the standard theory. The apparent low-field transition observed in the experiments is identified as a crossover due to weak localization and a strong reduction of the conductivity when Landau quantization becomes dominant.

en cond-mat.mes-hall, cond-mat.dis-nn
arXiv Open Access 2003
Thermoelectric power in between two plateaus in quantum Hall effect

Keshav N. Shrivastava

We have considered the response at two energies corresponding to two plateaus in the quantum Hall effect. Since the thermoelectric power involves the derivative of conductivity with respect to energy, we introduce the concept of a line width and hence an activation energy. We then use the Hall conductivity to define the thermoelectric power at the centre of two plateaus, which is found to vary monotonically as T^2 at low temperatures with fixed magnetic field. At elivated temperatures, the thermoelectric power varies as T(exp-Δ/k_BT).

en cond-mat.mes-hall, cond-mat.stat-mech
arXiv Open Access 2001
Observation of Quantized Hall Drag in a Strongly Correlated Bilayer Electron System

M. Kellogg, I. B. Spielman, J. P. Eisenstein et al.

The frictional drag between parallel two-dimensional electron systems has been measured in a regime of strong interlayer correlations. When the bilayer system enters the excitonic quantized Hall state at total Landau level filling factor ν_T=1 the longitudinal component of the drag vanishes but a strong Hall component develops. The Hall drag resistance is observed to be accurately quantized at h/e^2.

en cond-mat.mes-hall, cond-mat.str-el
arXiv Open Access 2004
Hall Conductance of a Two-Dimensional Electron Gas in Periodic Lattice with Triangular Antidots

V. Ya. Demikhovskii, A. A. Perov

The topic of this contribution is the investigation of quantum states and quantum Hall effect in electron gas subjected to a periodic potential of the lateral lattice. The potential is formed by triangular quantum antidos located on the sites of the square lattice. In a such system the inversion center and the four-fold rotation symmetry are absent. The topological invariants which characterize different magnetic subbands and their Hall conductances are calculated. It is shown that the details of the antidot geometry are crucial for the Hall conductance quantization rule. The critical values of lattice parameters defining the shape of triangular antidots at which the Hall conductance is changed drastically are determined. We demonstrate that the quantum states and Hall conductance quantization law for the triangular antidot lattice differ from the case of the square lattice with cylindrical antidots. As an example, the Hall conductances of magnetic subbands for different antidot geometries are calculated for the case when the number of magnetic flux quanta per unit cell is equal to three.

en cond-mat.mes-hall, cond-mat.str-el
arXiv Open Access 2002
Berry phase and spin quantum Hall effect in the vortex state of superfluid He3 in two dimensions

Jun Goryo, Mahito Kohmoto

We show that the spin quantum Hall effect in the vortex state of two-dimensional rotating superfluid He3 can be described as an adiabatic spin transport of Bloch quasiparticles. We show that the spin Hall conductivity is written by the Berry phase as well as the Chern number. The results have similarity to the adiabatic pumping of Bloch electrons and the spontaneous polarization in crystalline dielectrics.

en cond-mat.supr-con, cond-mat.mes-hall
arXiv Open Access 2004
Numerical study of spin quantum Hall transitions in superconductors with broken time-reversal symmetry

Qinghong Cui, Xin Wan, Kun Yang

We present results of numerical studies of spin quantum Hall transitions in disordered superconductors, in which the pairing order parameter breaks time-reversal symmetry. We focus mainly on p-wave superconductors in which one of the spin components is conserved. The transport properties of the system are studied by numerically diagonalizing pairing Hamiltonians on a lattice, and by calculating the Chern and Thouless numbers of the quasiparticle states. We find that in the presence of disorder, (spin-)current carrying states exist only at discrete critical energies in the thermodynamic limit, and the spin-quantum Hall transition driven by an external Zeeman field has the same critical behavior as the usual integer quantum Hall transition of non-interacting electrons. These critical energies merge and disappear as disorder strength increases, in a manner similar to those in lattice models for integer quantum Hall transition.

en cond-mat.supr-con, cond-mat.mes-hall