Hasil untuk "cond-mat.mes-hall"

Maik Selch

We proof the non-renormalization of the Hall viscosity by Coulomb interactions for integer and fractional quantum Hall Jain states building on previous results obtained for the Hall conductivity. We employ Wigner-Weyl calculus in order to represent the Hall viscosity in terms of a topological invariant comprised of Green functions and work within the composite fermion field theory model of Jain states of the fractional quantum Hall fluid presented by Lopez and Fradkin. The topological expression is first derived within the free field theory of electrons and explicitly calculated for this case as well as in the mean field approximation of the composite fermion theory Jain states. The topological orbital spin of composite fermions distinguishes their mean field treatment from that of electrons resulting in an additional topological contribution. We then argue that the introduction of Coulomb interactions does not lead to perturbative corrections of the Hall viscosity in both integer and fractional quantum Hall fluids. The proof relies on the assumptions of homogeneity and rotational invariance of an underlying sample modulo the vector potential giving rise to the homogeneous external magnetic field. These conditions imply a Hall viscosity per emergent quasiparticle number density quantized in units of one half times the average quasiparticle orbital spin or one quarter times the Wen-Zee shift. The latter features a contribution from the composite fermion topological orbital spin relative to that of electrons.

Anand Lalwani, Miriam Giparakis, Kanika Arora et al.

In this work, we experimentally investigate the frequency limit of Hall effect sensor designs based on a 2 dimensional electron gas (2DEG) gallium arsenide/aluminum gallium arsenide (GaAs/AlGaAs) heterostructure. The frequency limit is measured and compared for four GaAs/AlGaAs Hall effect sensor designs where the Ohmic contact length (contact geometry) is varied across the four devices. By varying the geometry, the trade-off in sensitivity and frequency limit is explored and the underlying causes of the frequency limit from the resistance and capacitance perspective is investigated. Current spinning, the traditional method to remove offset noise, imposes a practical frequency limit on Hall effect sensors. The frequency limit of the Hall effect sensor, without current spinning, is significantly higher. Wide-frequency Hall effect sensors can measure currents in power electronics that operate at higher frequencies is one such application.

Osamu Narikiyo

The weak-field Hall conductivity in metals is interpreted in terms of the curvature of the Fermi surface in the main part. In the appendix the orbital magnetic-susceptibility and the magneto-conductivity in metals are discussed focusing on Peierls' area factor.

Jean-Eric Wegrowe

The characterization of the stationary states in the spin-Hall effect is discussed within the framework of the phenomenological two spin-channel model. It is shown that two different definitions of the stationary states can be applied in the spin-Hall effect, leading to two different types of state in the bulk: zero transverse spin-current or non-zero pure spin-current. This difference is due to the treatment of the region near the edges, in which electric charge accumulation occurs. The screening equations that describe the accumulation of electric charges due to spin-orbit coupling are derived. The spin-accumulation associated to spin-flip scattering and the spin-Hall accumulation due to spin-orbit coupling are two independent effects if we assume that the screening length is small with respect to the spin-diffusion length. The corresponding transport equations are discussed in terms of the Dyakonov-Perel equations.

Katrin Zimmermann, Anna Jordan, Frédéric Gay et al.

Charge carriers in the quantum Hall regime propagate via one-dimensional conducting channels that form along the edges of a two-dimensional electron gas. Controlling their transmission through a gate-tunable constriction, also called quantum point contact (QPC), is fundamental for many coherent transport experiments. However, in graphene, tailoring a QPC with electrostatic gates remains challenging due to the formation of p-n junctions below gate electrodes along which electron and hole edge channels co-propagate and mix, short-circuiting the constriction. Here we show that this electron-hole mixing is drastically reduced in high mobility boron-nitride/graphene/boron-nitride van-der-Waals heterostructures thanks to the full degeneracy lifting of the Landau levels, enabling QPC operation with full channel pinch-off. We demonstrate gate-tunable selective transmission of quantum Hall edge channels through the QPC, both in the integer and the fractional quantum Hall regimes. This gate-control of edge channel propagation in graphene van-der-Waals heterostructures opens the door to quantum Hall interferometry and electron quantum optics experiments in the integer and fractional quantum Hall regimes of graphene.

Mohammad Sherafati, Alessandro Principi, Giovanni Vignale

We derive an analytic expression for the geometric Hall viscosity of non-interacting electrons in a single graphene layer in the presence of a perpendicular magnetic field. We show that a recently-derived formula in [C. Hoyos and D. T. Son, Phys. Rev. Lett. {\bf 108}, 066805 (2012)], which connects the coefficient of $q^2$ in the wave vector expansion of the Hall conductivity $σ_{xy}(q)$ of the two-dimensional electron gas (2DEG) to the Hall viscosity and the orbital diamagnetic susceptibility of that system, continues to hold for graphene -- in spite of the lack of Galilean invariance -- with a suitable definition of the effective mass. We also show that, for a sufficiently large number of occupied Landau levels in the positive energy sector, the Hall conductivity of electrons in graphene reduces to that of a Galilean-invariant 2DEG with an effective mass given by $\hbar k_F/v_F$ (cyclotron mass). Even in the most demanding case, i.e. when the chemical potential falls between the zero-th and the first Landau level, the cyclotron mass formula gives results accurate to better than 1$\%$. The connection between the Hall conductivity and the viscosity provides a possible avenue to measure the Hall viscosity in graphene.

Juntao Song, Emil Prodan

The conductivity $σ$ and resistivity $ρ$ tensors of the disordered Hofstadter model are mapped as functions of Fermi energy $E_F$ and temperature $T$ in the quantum critical regime of the plateau-insulator transition (PIT). The finite-size errors are eliminated by using the non-commutative Kubo-formula. The results reproduce all the key experimental characteristics of this transition in Integer Quantum Hall (IQHE) systems. In particular, the Quantized Hall Insulator (QHI) phase is detected and analyzed. The presently accepted characterization of the QHI phase in the quantum critical regime, based entirely on experimental data, is fully supported by our theoretical investigation.

J. Maciejko, B. Hsu, S. A. Kivelson et al.

The topological physics of quantum Hall states is efficiently encoded in purely topological quantum field theories of the Chern-Simons type. The reliable inclusion of low-energy dynamical properties in a continuum description however typically requires proximity to a quantum critical point. We construct a field theory that describes the quantum transition from an isotropic to a nematic Laughlin liquid. The soft mode associated with this transition approached from the isotropic side is identified as the familiar intra-Landau level Girvin-MacDonald-Platzman mode. We obtain z=2 dynamic scaling at the critical point and a description of Goldstone and defect physics on the nematic side. Despite the very different physical motivation, our field theory is essentially identical to a recent "geometric" field theory for a Laughlin liquid proposed by Haldane.

Wen Yang, L. J. Sham

This paper has been updated by the author to: arXiv:1012.0060v1 [cond-mat.mes-hall], titled "Collective Nuclear Stabilization by Optically Excited Hole in Quantum Dot"

Yu. V. Pershin, M. Di Ventra

The spin Hall effect does not generally result in a charge Hall voltage. We predict that in systems with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect is instead accompanied by a Hall voltage. Unlike the ordinary Hall effect, we find that this Hall voltage is quadratic in the longitudinal electric field for a wide range of parameters accessible experimentally. We also predict spin accumulation in the bulk and sharp peaks of spin-Hall induced charge accumulation near the edges. Our results can be readily tested experimentally, and would allow the electrical measurement of the spin Hall effect in non-magnetic systems and without injection of spin-polarized electrons.

R. L. Doretto, C. Morais Smith

We study the quantum Hall effect in graphene at filling factors ν= 0 and ν= \pm, concentrating on the quantum Hall ferromagnetic regime, within a non-perturbative bosonization formalism. We start by developing a bosonization scheme for electrons with two discrete degrees of freedom (spin-1/2 and pseudospin-1/2) restricted to the lowest Landau level. Three distinct phases are considered, namely the so-called spin-pseudospin, spin, and pseudospin phases. The first corresponds to a quarter-filled (ν=-1) while the others to a half-filled (ν= 0) lowest Landau level. In each case, we show that the elementary neutral excitations can be treated approximately as a set of n-independent kinds of boson excitations. The boson representation of the projected electron density, the spin, pseudospin, and mixed spin-pseudospin density operators are derived. We then apply the developed formalism to the effective continuous model, which includes SU(4) symmetry breaking terms, recently proposed by Alicea and Fisher. For each quantum Hall state, an effective interacting boson model is derived and the dispersion relations of the elementary excitations are analytically calculated. We propose that the charged excitations (quantum Hall skyrmions) can be described as a coherent state of bosons. We calculate the semiclassical limit of the boson model derived from the SU(4) invariant part of the original fermionic Hamiltonian and show that it agrees with the results of Arovas and co-workers for SU(N) quantum Hall skyrmions. We briefly discuss the influence of the SU(4) symmetry breaking terms in the skyrmion energy.

Jinwu Ye

This paper was withdrawn and incorporated into section II of cond-mat/0310512

R. M. Potok, I. G. Rau, Hadas Shtrikman et al.

This document provides detailed descriptions of data acquisition and data analysis in support of the accompanying Article, cond-mat/0610721: Observation of the two-channel Kondo effect. Some of the most intriguing problems in solid state physics arise when the motion of one electron dramatically affects the motion of surrounding electrons. Traditionally, such highly-correlated electron systems have been studied mainly in materials with complex transition metal chemistry. Over the past decade, researchers have learned to confine one or a few electrons within a nanoscale semiconductor "artificial atom", and to understand and control this simple system in exquisite detail. In the accompanying Article, we combine such individually well-understood components to create a novel highly-correlated electron system within a nano-engineered semiconductor structure. We tune the system in situ through a quantum phase transition between two distinct states, one familiar and one subtly new. The boundary between these states is a quantum critical point: the exotic and previously elusive two-channel Kondo state, in which electrons in two reservoirs are entangled through their interaction with a single localized spin.

Hoang K. Nguyen, Yogesh N. Joglekar, Ganpathy Murthy

Over the past few years one of us (Murthy) in collaboration with R. Shankar has developed an extended Hamiltonian formalism capable of describing the ground state and low energy excitations in the fractional quantum Hall regime. The Hamiltonian, expressed in terms of Composite Fermion operators, incorporates all the nonperturbative features of the fractional Hall regime, so that conventional many-body approximations such as Hartree-Fock and time-dependent Hartree-Fock are applicable. We apply this formalism to develop a microscopic theory of the collective edge modes in fractional quantum Hall regime. We present the results for edge mode dispersions at principal filling factors $ν=1/3,1/5$ and $ν=2/5$ for systems with unreconstructed edges. The primary advantage of the method is that one works in the thermodynamic limit right from the beginning, thus avoiding the finite-size effects which ultimately limit exact diagonalization studies.

E. M. Hankiewicz, Giovanni Vignale

We develop the microscopic theory of the extrinsic spin Hall conductivity of a two-dimensional electron gas, including skew-scattering, side-jump, and Coulomb interaction effects. We find that while the spin-Hall conductivity connected with the side-jump is independent of the strength of electron-electron interactions, the skew-scattering term is reduced by the spin-Coulomb drag, so the total spin current and the total spin-Hall conductivity are reduced for typical experimental mobilities. Further, we predict that in paramagnetic systems the spin-Coulomb drag reduces the spin accumulations in two different ways: (i) directly through the reduction of the skew-scattering contribution (ii) indirectly through the reduction of the spin diffusion length. Explicit expressions for the various contributions to the spin Hall conductivity are obtained using an exactly solvable model of the skew-scattering.

S. Y. Liu, X. L. Lei

A nonequilibrium Green's function approach is employed to investigate the spin-Hall effect in diffusive two-dimensional electron systems with Rashba spin-orbit interaction. Considering a long-range electron-impurity scattering potential in the self-consistent Born approximation, we find that the spin-Hall effect arises from two distinct interband polarizations in helicity basis: a disorder-unrelated polarization directly induced by the electric field and a polarization mediated by electron-impurity scattering. The disorder-unrelated polarization is associated with all electron states below the Fermi surface and produces the original intrinsic spin-Hall current, while the disorder-mediated polarization emerges with contribution from the electron states near the Fermi surface and gives rise to an additional contribution to the spin-Hall current. Within the diffusive regime, the total spin-Hall conductivity vanishes in {\it infinitely large} samples, independently of temperature, of the spin-orbit coupling constant, of the impurity density, and of the specific form of the electron-impurity scattering potential. However, in a {\it finite-size} Rashba two-dimensional semiconductor, the spin-Hall conductivity no longer always vanishes. Depending on the sample size in the micrometer range, it can be positive, zero or negative with a maximum absolute value reaching as large as $e/8π$ order of magnitude at low temperatures. As the sample size increases, the total spin-Hall conductivity oscillates with a decreasing amplitude. We also discuss the temperature dependence of the spin-Hall conductivity for different sample sizes.

Bernhard Kramer, Stefan Kettemann, Tomi Ohtsuki

The localization properties of electron states in the quantum Hall regime are reviewed. The random Landau model, the random matrix model, the tight-binding Peierls model, and the network model of Chalker and Coddington are introduced. Descriptions in terms of equivalent tight-binding Hamiltonians, and the 2D Dirac model, are outlined. Evidences for the universal critical behavior of the localization length are summarized. A short review of the supersymmetric critical field theory is provided. The interplay between edge states and bulk localization properties is investigated. For a system with finite width and with short-range randomness, a sudden breakdown of the two-point conductance from $ne^{2}/h$ to 0 ($n$ integer) is predicted if the localization length exceeds the distance between the edges.

Yong Baek Kim, Chetan Nayak, Eugene Demler et al.

We consider a number of strongly-correlated quantum Hall states which are likely to be realized in bilayer quantum Hall systems at total Landau level filling fraction ${ν_T}=1$. One state, the $(3,3,-1)$ state, can occur as an instability of a compressible state in the large $d/l_B$ limit, where $d$ and $l_B$ are the interlayer distance and magnetic length, respectively. This state has a hierarchical descendent which is interlayer coherent. Another interlayer coherent state, which is expected in the small $d/l_B$ limit is the well-known Halperin $(1,1,1)$ state. Using the concept of composite fermion pairing, we discuss the wavefunctions which describe these states. We construct a phase diagram using the Chern-Simons Landau-Ginzburg theory and discuss the transitions between the various phases. We propose that the longitudinal and Hall drag resistivities can be used together with interlayer tunneling to experimentally distinguish these different quantum Hall states. Our work indicates the bilayer ${ν_T}=1$ quantum Hall phase diagram to be considerably richer than that assumed so far in the literature.

Ana Lopez, Eduardo Fradkin

We review the fermionic Chern-Simons field theory for the Fractional Quantum Hall Effect (FQHE). We show that in this field theoretic approach to the problem of interacting electrons moving in a plane in the presence of an external magnetic field, the FQHE states appear naturally as the semiclassical states of the theory. In this framework, the FQHE states are the unique ground states of a system of electrons on a fixed geometry. The excitation spectrum is fully gapped and these states can be viewed as infrared stable fixed points of the system. It is shown that the long distance, low energy properties of the system are described exactly by this theory. It is further shown that, in this limit, the actual ground state wave function has the Laughlin form. We also discuss the application of this theory to the problem of the FQHE in bilayers and in unpolarized single layer systems.

Jairo Sinova, Shuichi Murakami, Shun-Qing Shen et al.

The phenomena of the spin-Hall effect, initially proposed over three decades ago in the context of asymmetric Mott skew scattering, was revived recently by the proposal of a possible intrinsic spin-Hall effect originating from a strongly spin-orbit coupled band structure. This new proposal has generated an extensive debate and controversy over the past two years. The purpose of this workshop, held at the Asian Pacific Center for Theoretical Physics, was to bring together many of the leading groups in this field to resolve such issues and identify future challenges. We offer this short summary to clarify the now settled issues on some of the more controversial aspects of the debate and help refocus the research efforts in new and important avenues.