Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper
Abstrak
A novel dry transfer technique opens the door to large-scale CVD graphene with carrier mobilities of up to several 100,000 cm2 V−1 s−1. Graphene research has prospered impressively in the past few years, and promising applications such as high-frequency transistors, magnetic field sensors, and flexible optoelectronics are just waiting for a scalable and cost-efficient fabrication technology to produce high-mobility graphene. Although significant progress has been made in chemical vapor deposition (CVD) and epitaxial growth of graphene, the carrier mobility obtained with these techniques is still significantly lower than what is achieved using exfoliated graphene. We show that the quality of CVD-grown graphene depends critically on the used transfer process, and we report on an advanced transfer technique that allows both reusing the copper substrate of the CVD growth and making devices with mobilities as high as 350,000 cm2 V–1 s–1, thus rivaling exfoliated graphene.
Topik & Kata Kunci
Penulis (10)
L. Banszerus
M. Schmitz
S. Engels
J. Dauber
M. Oellers
F. Haupt
Kenji Watanabe
T. Taniguchi
B. Beschoten
C. Stampfer
Akses Cepat
- Tahun Terbit
- 2015
- Bahasa
- en
- Total Sitasi
- 760×
- Sumber Database
- Semantic Scholar
- DOI
- 10.1126/sciadv.1500222
- Akses
- Open Access ✓