Semantic Scholar Open Access 2010 998 sitasi

Phase change memory technology

G. Burr M. Breitwisch M. Franceschini D. Garetto K. Gopalakrishnan +8 lainnya

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Abstrak

The authors survey the current state of phase change memory (PCM), a nonvolatile solid-state memory technology built around the large electrical contrast between the highly resistive amorphous and highly conductive crystalline states in so-called phase change materials. PCM technology has made rapid progress in a short time, having passed older technologies in terms of both sophisticated demonstrations of scaling to small device dimensions, as well as integrated large-array demonstrators with impressive retention, endurance, performance, and yield characteristics. They introduce the physics behind PCM technology, assess how its characteristics match up with various potential applications across the memory-storage hierarchy, and discuss its strengths including scalability and rapid switching speed. Challenges for the technology are addressed, including the design of PCM cells for low reset current, the need to control device-to-device variability, and undesirable changes in the phase change material that c...

Topik & Kata Kunci

Physics Materials Science

Penulis (13)

G. Burr

M. Breitwisch

M. Franceschini

D. Garetto

K. Gopalakrishnan

B. Jackson

B. Kurdi

C. Lam

L. Lastras

A. Padilla

B. Rajendran

S. Raoux

R. Shenoy

Format Sitasi

APA MLA BibTeX

Burr, G., Breitwisch, M., Franceschini, M., Garetto, D., Gopalakrishnan, K., Jackson, B. et al. (2010). Phase change memory technology. https://doi.org/10.1116/1.3301579

Akses Cepat

Lihat di Sumber doi.org/10.1116/1.3301579

Informasi Jurnal

Tahun Terbit: 2010
Bahasa: en
Total Sitasi: 998×
Sumber Database: Semantic Scholar
DOI: 10.1116/1.3301579
Akses: Open Access ✓