Semantic Scholar Open Access 2010 520 sitasi

Role of Gallium Doping in Dramatically Lowering Amorphous‐Oxide Processing Temperatures for Solution‐Derived Indium Zinc Oxide Thin‐Film Transistors

Sunho Jeong Young-Geun Ha Jooho Moon A. Facchetti T. Marks

Penulis (5)

S

Sunho Jeong

Y

Young-Geun Ha

J

Jooho Moon

A

A. Facchetti

T

T. Marks

Format Sitasi

Jeong, S., Ha, Y., Moon, J., Facchetti, A., Marks, T. (2010). Role of Gallium Doping in Dramatically Lowering Amorphous‐Oxide Processing Temperatures for Solution‐Derived Indium Zinc Oxide Thin‐Film Transistors. https://doi.org/10.1002/adma.200902450

Akses Cepat

PDF tidak tersedia langsung

Cek di sumber asli →
Lihat di Sumber doi.org/10.1002/adma.200902450
Informasi Jurnal
Tahun Terbit
2010
Bahasa
en
Total Sitasi
520×
Sumber Database
Semantic Scholar
DOI
10.1002/adma.200902450
Akses
Open Access ✓