Chemical mechanical polishing for sapphire wafers using a developed slurry
Abstrak
Abstract At present, corrosive ingredients are widely employed in chemical mechanical polishing (CMP) of sapphire, bringing a potential threat to both people and environment. This results in high cost and long processing time on the treatment of CMP slurry of sapphire. It is a challenge to develop a novel green CMP for sapphire to meet the stringent requirements of high performance products. In this study, a novel green CMP is proposed for sapphire, consisting of silica nanoparticles of 50 nm, triethanolamine (TEA), sodium metasilicate nonahydrate, and deionized water. After green CMP, surface roughness Ra, root mean square (rms), and peak-to-valley (PV) are 0.11, 0.139, and 1.65 nm, respectively. Material removal rate is 3.31 μm/h during green CMP. To the best of our knowledge, surface roughness Ra and rms after green CMP developed are the lowest on a sapphire wafer, compared with those reported previously. The CMP mechanism is elucidated by X-ray photoelectron spectroscopy (XPS) and infrared (IR) spectra. Sapphire formed Al(OH)4− ions in an alkaline environment, which was chelated by TEA, and removed from the surface of sapphire. These findings provide new insights to fabricate high performance devices of sapphire for the use in semiconductor and microelectronic industries.
Topik & Kata Kunci
Penulis (6)
Zhenyu Zhang
L. Jie
Wei Hu
Lezhen Zhang
Xie Wenxiang
Longxing Liao
Akses Cepat
PDF tidak tersedia langsung
Cek di sumber asli →- Tahun Terbit
- 2021
- Bahasa
- en
- Total Sitasi
- 157×
- Sumber Database
- Semantic Scholar
- DOI
- 10.1016/J.JMAPRO.2021.01.004
- Akses
- Open Access ✓