Study on the Influence of Strong Electromagnetic Pulse on GaAs HEMT Devices

As a new generation of microwave and millimeter-wave devices, HEMTs have already become core components of microwave mixers, oscillators, and other such equipment. However, as integration levels continue to rise and device sizes shrink, microelectronic devices are becoming increasingly sensitive to various types of electromagnetic interference and thermal effects, which can cause damage. Therefore, it is necessary to study the damage effects and mechanisms of HEMT devices under electromagnetic interference. This research is conducted to address the issue that the core devices of radio frequency power amplifier integrated circuits are prone to interference or damage from strong electromagnetic pulses. It clarifies the interference or damage process of the core devices under the influence of strong electromagnetic pulses, establishes a GaAs HEMT device model under the coupling conditions of electricity, heat and magnetism, and analyzes the triggering process and failure mechanism. It investigates the impact of different electromagnetic parameters on the failure process, obtains the sensitive locations and parameters and establishes an interference model that can reflect different electromagnetic parameters. This research work provides a theoretical foundation for establishing and simulating the electromagnetic interference damage model of HEMT devices, and also accelerates research in related fields.