Semantic Scholar Open Access 2004 1 sitasi

Reply to Comment (cond-mat/0311174)

V. Pudalov M. Gershenson H. Kojima G. Brunthaler G. Bauer

Abstrak

We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densities (~ 1:7) at intermediate temperatures, agree quantitatively with theory of interaction corrections in the ballistic regime, T\tau >1. Our comparison does not involve any fitting parameters.

Topik & Kata Kunci

Penulis (5)

V

V. Pudalov

M

M. Gershenson

H

H. Kojima

G

G. Brunthaler

G

G. Bauer

Format Sitasi

Pudalov, V., Gershenson, M., Kojima, H., Brunthaler, G., Bauer, G. (2004). Reply to Comment (cond-mat/0311174). https://www.semanticscholar.org/paper/68ee1455b87422c3f171c91e2cb719b626101c9b

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