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2004
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Reply to Comment (cond-mat/0311174)
V. Pudalov
M. Gershenson
H. Kojima
G. Brunthaler
G. Bauer
Abstrak
We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densities (~ 1:7) at intermediate temperatures, agree quantitatively with theory of interaction corrections in the ballistic regime, T\tau >1. Our comparison does not involve any fitting parameters.
Topik & Kata Kunci
Penulis (5)
V
V. Pudalov
M
M. Gershenson
H
H. Kojima
G
G. Brunthaler
G
G. Bauer
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