Semantic Scholar Open Access 2014 101 sitasi

Memfractance: A Mathematical Paradigm for Circuit Elements with Memory

Mohammed Salah Abdelouahab R. Lozi L. Chua

Abstrak

Memristor, the missing fourth passive circuit element predicted forty years ago by Chua was recognized as a nanoscale device in 2008 by researchers of a H. P. Laboratory. Recently the notion of memristive systems was extended to capacitive and inductive elements, namely, memcapacitor and meminductor whose properties depend on the state and history of the system. In this paper, we use fractional calculus to generalize and provide a mathematical paradigm for describing the behavior of such elements with memory. In this framework, we extend Ohm's law to the generalized Ohm's law and prove it.

Penulis (3)

M

Mohammed Salah Abdelouahab

R

R. Lozi

L

L. Chua

Format Sitasi

Abdelouahab, M.S., Lozi, R., Chua, L. (2014). Memfractance: A Mathematical Paradigm for Circuit Elements with Memory. https://doi.org/10.1142/S0218127414300237

Akses Cepat

Lihat di Sumber doi.org/10.1142/S0218127414300237
Informasi Jurnal
Tahun Terbit
2014
Bahasa
en
Total Sitasi
101×
Sumber Database
Semantic Scholar
DOI
10.1142/S0218127414300237
Akses
Open Access ✓