Dilute Rhenium Doping and its Impact on Intrinsic Defects in MoS2
Abstrak
Substitutionally-doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic circuits. In this work, we demonstrate substitutional Rhenium (Re) doping of MoS 2 monolayers with controllable concentrations down to 500 parts-per-million (ppm) by metal-organic chemical vapor deposition (MOCVD). Surprisingly, we discover that even trace amounts of Re lead to a reduction in sulfur site defect density by 5-10×. Ab initio models indicate the free-energy of sulfur-vacancy formation is increased along the MoS 2 growth-front when Re
Topik & Kata Kunci
Penulis (29)
R. Torsi
Kyle T. Munson
Rahul Pendurthi
Esteban A. Marques
B. V. Troeye
L. Huberich
B. Schuler
Maxwell A Feidler
KE Wang
G. Pourtois
Saptarshi Das
J. Asbury
Yu‐Chuan Lin
Joshua A. Robinson Department of Materials Science
Engineering
The Pennsylvania State University
D. Chemistry
Department of Materials Science
Mechanics
Imec
Leuven
Department of Molecular Design
Synthesis
K. Leuven
N. Laboratory
Empa - Swiss Federal Laboratories for Materials Science
Technology
M. R. Institute
D. Physics
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