Semantic Scholar
Open Access
2012
675 sitasi
A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors
C. Auth
C. Allen
A. Blattner
D. Bergstrom
M. Brazier
+42 lainnya
Topik & Kata Kunci
Penulis (47)
C
C. Auth
C
C. Allen
A
A. Blattner
D
D. Bergstrom
M
M. Brazier
M
M. Bost
M
M. Buehler
V
V. Chikarmane
T
T. Ghani
T
T. Glassman
R
R. Grover
W
W. Han
D
D. Hanken
M
M. Hattendorf
P
P. Hentges
R
R. Heussner
J
J. Hicks
D
D. Ingerly
P
P. Jain
S
S. Jaloviar
R
R. James
D
Derek K. Jones
J
J. Jopling
S
S. Joshi
C
C. Kenyon
H
Huichu Liu
R
R. McFadden
B
B. Mcintyre
J
J. Neirynck
C
C. Parker
L
L. Pipes
I
I. Post
S
S. PradhanSameer
M
M. Prince
S
S. Ramey
T
T. Reynolds
J
J. Roesler
J
J. Sandford
J
J. Seiple
P
P. Smith
C
C. Thomas
D
D. Towner
T
T. Troeger
C
C. Weber
P
P. Yashar
K
K. Zawadzki
K
K. Mistry
Format Sitasi
Auth, C., Allen, C., Blattner, A., Bergstrom, D., Brazier, M., Bost, M. et al. (2012). A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors. https://doi.org/10.1109/VLSIT.2012.6242496
Akses Cepat
Informasi Jurnal
- Tahun Terbit
- 2012
- Bahasa
- en
- Total Sitasi
- 675×
- Sumber Database
- Semantic Scholar
- DOI
- 10.1109/VLSIT.2012.6242496
- Akses
- Open Access ✓