Semantic Scholar Open Access 2020 194 sitasi

ReRAM: History, Status, and Future

Yangyin Chen

Abstrak

This article reviews the resistive random-access memory (ReRAM) technology initialization back in the 1960s and its heavily focused research and development from the early 2000s. This review goes through various oxygen/oxygen vacancy and metal-ion-based ReRAM devices and their operation mechanisms. This review also benchmarks the performance of various oxygen/oxygen vacancy and metal-ion-based ReRAM devices with general trend drawn. Being a semiconductor memory and storage technology, the commercialization attempts for both stand-alone mass storage/storage-class memory and embedded nonvolatile memory are also reviewed. Looking toward the coming era, the potential of using ReRAM technology to improve machine learning efficiency is discussed.

Topik & Kata Kunci

Computer Science

Penulis (1)

Yangyin Chen

Format Sitasi

APA MLA BibTeX

Chen, Y. (2020). ReRAM: History, Status, and Future. https://doi.org/10.1109/TED.2019.2961505

Akses Cepat

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Informasi Jurnal

Tahun Terbit: 2020
Bahasa: en
Total Sitasi: 194×
Sumber Database: Semantic Scholar
DOI: 10.1109/TED.2019.2961505
Akses: Open Access ✓