Semantic Scholar Open Access 2012 3234 sitasi

Single-layer MoS2 phototransistors.

Z. Yin Hai Li Hong Li Lin Jiang Yumeng Shi +5 lainnya

Abstrak

A new phototransistor based on the mechanically exfoliated single-layer MoS(2) nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS(2) phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS(2) phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.

Penulis (10)

Z

Z. Yin

H

Hai Li

H

Hong Li

L

Lin Jiang

Y

Yumeng Shi

Y

Yinghui Sun

G

Gang Lu

Q

Qing Zhang

X

Xiaodong Chen

H

Hua Zhang

Format Sitasi

Yin, Z., Li, H., Li, H., Jiang, L., Shi, Y., Sun, Y. et al. (2012). Single-layer MoS2 phototransistors.. https://doi.org/10.1021/nn2024557

Akses Cepat

Lihat di Sumber doi.org/10.1021/nn2024557
Informasi Jurnal
Tahun Terbit
2012
Bahasa
en
Total Sitasi
3234×
Sumber Database
Semantic Scholar
DOI
10.1021/nn2024557
Akses
Open Access ✓