Single-layer MoS2 phototransistors.
Abstrak
A new phototransistor based on the mechanically exfoliated single-layer MoS(2) nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS(2) phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS(2) phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.
Topik & Kata Kunci
Penulis (10)
Z. Yin
Hai Li
Hong Li
Lin Jiang
Yumeng Shi
Yinghui Sun
Gang Lu
Qing Zhang
Xiaodong Chen
Hua Zhang
Akses Cepat
- Tahun Terbit
- 2012
- Bahasa
- en
- Total Sitasi
- 3234×
- Sumber Database
- Semantic Scholar
- DOI
- 10.1021/nn2024557
- Akses
- Open Access ✓