DOAJ Open Access 2021

NBTI Fast Electrical Characterization in pMOSFET Devices

DhiaElhak MESSAOUD Boualem Djezzar Abdelmadjid Benabdelmoumene Mohamed Boubaaya Boumediene Zatout +1 lainnya

Abstrak

To measure the entire characteristic of p-MOSFET, we have implemented the fast Ids-Vgs technique. The latter is used to study NBTI phenomenon with measure-stress-measure method, for electric field 5MV/cm < Eox < 7.5MV/cm, and temperatures 27°C < Ts < 120°C. Measurement time has reached 10 us, and a stress-measure delay (switching time) of about a hundred of milliseconds was obtained. However, strengths and weaknesses of the implemented technique have been discussed. Furthermore, the extraction methods: transconductance (Gm), subthreshold slope (SS), and mid-gap (MG), have been implemented and discussed as well. NBTI parameter i.e. Delta Vth, n, gamma and Ea were extracted and compared to other results. A time exponent n of 0.149 has been touched. Activation energy Ea = 0.039 eV and a field factor gamma = 0.41 MV/cm for a stress time ts < 10 s have been obtained.

Topik & Kata Kunci

Applications of electric power Electric apparatus and materials. Electric circuits. Electric networks

Penulis (6)

DhiaElhak MESSAOUD

Boualem Djezzar

Abdelmadjid Benabdelmoumene

Mohamed Boubaaya

Boumediene Zatout

Abdelkader Zitouni

Format Sitasi

APA MLA BibTeX

MESSAOUD, D., Djezzar, B., Benabdelmoumene, A., Boubaaya, M., Zatout, B., Zitouni, A. (2021). NBTI Fast Electrical Characterization in pMOSFET Devices. https://doi.org/10.51485/ajss.v6i1.3

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Informasi Jurnal

Tahun Terbit: 2021
Sumber Database: DOAJ
DOI: 10.51485/ajss.v6i1.3
Akses: Open Access ✓