DOAJ Open Access 2026

Chemical vapor deposition of compound semiconductors: process simulation and experimental validation

Yoshihiro Kangawa Akira Kusaba Toru Akiyama Shugo Nitta Motoaki Iwaya +5 lainnya

Abstrak

Chemical vapor deposition (CVD) is fundamental to semiconductor nanotechnology, yet many aspects of its processes and underlying physical and chemical phenomena remain unexplained. This is because CVD is a complex system involving the elementary growth processes of (1) gas-phase reactions, (2) surface processes, and (3) solid-phase diffusion. This review introduces the following research topics, utilizing theoretical approaches that integrate simulations of each fundamental process: the influence of CVD conditions on the residual impurity concentration, surface morphology, and heterointerface flatness. Through integrated simulation, physical and chemical insights that cannot be obtained from simulations of individual elementary growth processes are revealed.

Topik & Kata Kunci

Physics

Penulis (10)

Yoshihiro Kangawa

Akira Kusaba

Toru Akiyama

Shugo Nitta

Motoaki Iwaya

Hideto Miyake

Paweł Kempisty

Marta A. Chabowska

Hristina Popova

Magdalena A. Załuska-Kotur

Format Sitasi

APA MLA BibTeX

Kangawa, Y., Kusaba, A., Akiyama, T., Nitta, S., Iwaya, M., Miyake, H. et al. (2026). Chemical vapor deposition of compound semiconductors: process simulation and experimental validation. https://doi.org/10.35848/1882-0786/ae2f19

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Informasi Jurnal

Tahun Terbit: 2026
Sumber Database: DOAJ
DOI: 10.35848/1882-0786/ae2f19
Akses: Open Access ✓