DOAJ Open Access 2025

Mg-annealed anode contacts to reduce the on-resistance of GaN pn diodes formed via Mg implantation and ultra-high pressure annealing

Md Azizul Hasan Matthew Alessi Dolar Khachariya Will Mecouch Seiji Mita +8 lainnya

Abstrak

Drive-in diffusion of Mg implanted into GaN during ultra-high pressure annealing leads to low surface acceptor concentrations. This favors p-type Schottky contact formation, which severely increases the on-state resistance of Mg-implanted GaN pn diodes (PNDs). This work aims to reduce the resistance of contacts to Mg-implanted p-GaN by incorporating Mg deposition and annealing into the contact stack, achieving a rectification ratio (RR) over 10 ^12 , a current density above 1 kA cm ^−2 and a record-low differential specific on-resistance ( R _ON ) of 0.65 mΩ.cm ^2 in Mg-implanted PNDs, offering a potential solution for improving the performance and manufacturability of vertical GaN devices that require contacts to Mg-implanted p-GaN.

Topik & Kata Kunci

Physics

Penulis (13)

Md Azizul Hasan

Matthew Alessi

Dolar Khachariya

Will Mecouch

Seiji Mita

Pramod Reddy

Kacper Sierakowski

Tomasz Sochacki

Michal Bockowski

Erhard Kohn

Zlatko Sitar

Ramón Collazo

Spyridon Pavlidis

Format Sitasi

APA MLA BibTeX

Hasan, M.A., Alessi, M., Khachariya, D., Mecouch, W., Mita, S., Reddy, P. et al. (2025). Mg-annealed anode contacts to reduce the on-resistance of GaN pn diodes formed via Mg implantation and ultra-high pressure annealing. https://doi.org/10.35848/1882-0786/adfc26

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Informasi Jurnal

Tahun Terbit: 2025
Sumber Database: DOAJ
DOI: 10.35848/1882-0786/adfc26
Akses: Open Access ✓