DOAJ Open Access 2025

In situ SiN/AlN/GaN HEMTs with regrown contacts using selective etching

Can Cao Sheikh Ifatur Rahman Chris Chae Jinwoo Hwang Chandan Joishi +2 lainnya

Abstrak

We show AlN/GaN high electron mobility transistors with in situ SiN for passivation and regrown n ^+ GaN ohmic contacts using a selective etching process that is more suitable for device scaling. The regrown ohmic contacts have a clean and sharp edge definition with a contact resistance of 0.25 Ω·mm. The interfacial resistance between the regrown n ^+ GaN and the 2DEG at AlN/GaN interface is 0.058 Ω·mm, close to the theoretical quantum conductance limit. The fabricated devices with a gate length of 0.7 μm exhibit a maximum current density of 1.57 A mm ^−1 and on-resistance of 1.85 Ω·mm at a gate bias of 1 V.

Topik & Kata Kunci

Physics

Penulis (7)

Can Cao

Sheikh Ifatur Rahman

Chris Chae

Jinwoo Hwang

Chandan Joishi

Siddharth Rajan

Wu Lu

Format Sitasi

APA MLA BibTeX

Cao, C., Rahman, S.I., Chae, C., Hwang, J., Joishi, C., Rajan, S. et al. (2025). In situ SiN/AlN/GaN HEMTs with regrown contacts using selective etching. https://doi.org/10.35848/1882-0786/adb09b

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Informasi Jurnal

Tahun Terbit: 2025
Sumber Database: DOAJ
DOI: 10.35848/1882-0786/adb09b
Akses: Open Access ✓