DOAJ Open Access 2023

Degree of Polarization of Cathodoluminescence from a GaAs Facet in the Vicinity of an SiN Stripe

Daniel T. Cassidy Jean-Pierre Landesman Merwan Mokhtari Philippe Pagnod-Rossiaux Marc Fouchier +1 lainnya

Abstrak

Measurements of the cathodoluminescence (CL) and the degree of polarization (DOP) of (CL) from the facet of a GaAs substrate and in the vicinity of a SiN stripe are reported and analyzed. The deformation induced by the SiN stripe is estimated by fitting the measured DOP to 3D finite element method (FEM) simulations. The deformation is found to be more complex than an initial condition of biaxial stress in the SiN. A ratio of fit coefficients suggests that the dependence of DOP on strain is described by equations presented in Appl. Opt. 59, 5506–5520 (2020). These equations give a DOP that is either proportional to a weighted difference of the principal components of strain in the measurement plane, or proportional to the shear strain in the measurement plane, depending on the chosen orientation of the measurement axes.

Topik & Kata Kunci

Optics. Light Applied optics. Photonics

Penulis (6)

Daniel T. Cassidy

Jean-Pierre Landesman

Merwan Mokhtari

Philippe Pagnod-Rossiaux

Marc Fouchier

Christian Monachon

Format Sitasi

APA MLA BibTeX

Cassidy, D.T., Landesman, J., Mokhtari, M., Pagnod-Rossiaux, P., Fouchier, M., Monachon, C. (2023). Degree of Polarization of Cathodoluminescence from a GaAs Facet in the Vicinity of an SiN Stripe. https://doi.org/10.3390/opt4020019

Akses Cepat

PDF tidak tersedia langsung

Cek di sumber asli →

Lihat di Sumber doi.org/10.3390/opt4020019

Informasi Jurnal

Tahun Terbit: 2023
Sumber Database: DOAJ
DOI: 10.3390/opt4020019
Akses: Open Access ✓