Electron Transport, Charge Transfer Processes and Localized States of Charge Carriers in Nanosized Anodic TiO₂ Films

TiO₂ films with a thickness of 20 nm were obtained by anodizing a titanium film with an aluminum sublayer on a glass substrate. The I–V characteristics were studied in a temperature range of 100–300 K. Three linear sections can be distinguished on the I–V curves in logarithmic coordinates with a bias voltage of up to 2.5 V. The first section is an ohmic section with a bias voltage sweep from 0 V. The second section is associated with the space-charge-limited currents. The third section is characterized by the flow of Poole–Frenkel currents. In the third section, the slope of the approximating line is greater than in the second one due to the flow of higher currents. This is explained by the transition of electrons from donor centers to trap levels, which leads to a decrease in the number of free traps available for capturing electrons injected from the contacts into the conduction band. The obtained values of the Fermi energy of 0.032 and 0.028 eV for temperatures from 100 to 300 K, respectively, indicate that the electron traps in the forbidden zone of TiO₂ are shallow. The value of the donor level energy E = 0.082 eV is close to the values of the activation energy of thermal conductivity. This indicates the formation of donor centers in anodic TiO₂ by the mechanism of donor vacancies. In anodic TiO₂ films, the concentration of electron traps is 10¹⁵ cm⁻³, which is approximately three orders of magnitude less than their concentration in anodic TiO₂ films obtained by vacuum deposition.