Radiation Hardness of Oxide Thin Films Prepared by Magnetron Sputtering Deposition
Abstrak
Thin amorphous oxide films (a-SiO<sub>2</sub>, a-Al<sub>2</sub>O<sub>3</sub>, a-MgO) were prepared by magnetron sputtering deposition. Their response to high-energy heavy ion beams (23 MeV I, 18 MeV Cu, 2.5 MeV Cu) and gamma-ray (1.25 MeV) irradiation was studied by elastic recoil detection analysis and infrared spectroscopy. It was established that their high radiation hardness is due to a high level of disorder, already present in as-prepared samples, so the high-energy heavy ion irradiation cannot change their structure much. In the case of a-SiO<sub>2</sub>, this resulted in a completely different response to high-energy heavy ion irradiation found previously in thermally grown a-SiO<sub>2</sub>. In the case of a-MgO, only gamma-ray irradiation was found to induce significant changes.
Topik & Kata Kunci
Penulis (6)
Marko Škrabić
Marija Majer
Zdravko Siketić
Maja Mičetić
Željka Knežević
Marko Karlušić
Akses Cepat
- Tahun Terbit
- 2025
- Sumber Database
- DOAJ
- DOI
- 10.3390/app15137067
- Akses
- Open Access ✓