DOAJ Open Access 2022

Electrical and magnetic properties of antiferromagnetic semiconductor MnSi2N4 monolayer

Dongke Chen Dongke Chen Zhengyu Jiang Ying Tang Junlei Zhou +3 lainnya

Abstrak

Two-dimensional antiferromagnetic semiconductors have triggered significant attention due to their unique physical properties and broad application. Based on first-principles calculations, a novel two-dimensional (2D) antiferromagnetic material MnSi2N4 monolayer is predicted. The calculation results show that the two-dimensional MnSi2N4 prefers an antiferromagnetic state with a small band gap of 0.26 eV. MnSi2N4 has strong antiferromagnetic coupling which can be effectively tuned under strain. Interestingly, the MnSi2N4 monolayer exhibits a half-metallic ferromagnetic properties under an external magnetic field, in which the spin-up electronic state displays a metallic property, while the spin-down electronic state exhibits a semiconducting characteristic. Therefore, 100% spin polarization can be achieved. Two-dimensional MnSi2N4 monolayer has potential application in the field of high-density information storage and spintronic devices.

Topik & Kata Kunci

Chemistry

Penulis (8)

Dongke Chen

Zhengyu Jiang

Ying Tang

Junlei Zhou

Yuzhou Gu

Jing-Jing He

Jiaren Yuan

Format Sitasi

APA MLA BibTeX

Chen, D., Chen, D., Jiang, Z., Tang, Y., Zhou, J., Gu, Y. et al. (2022). Electrical and magnetic properties of antiferromagnetic semiconductor MnSi2N4 monolayer. https://doi.org/10.3389/fchem.2022.1103704

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Informasi Jurnal

Tahun Terbit: 2022
Sumber Database: DOAJ
DOI: 10.3389/fchem.2022.1103704
Akses: Open Access ✓