DOAJ Open Access 2023

High-Q Transformer Neutralization Technique for W-Band Dual-Band LNA Using 0.1 μm GaAs pHEMT Technology

Taejoo Sim Dong-min Lee Wansik Kim Kichul Kim Jeung Won Choi +2 lainnya

Lihat Sumber DOI

Abstrak

In this study, a dual-band low-noise amplifier (LNA) was implemented by applying a transformer-based neutralization technology to the W-band. Incorporating the neutralization technique was difficult owing to performance degradation in the W-band. However, circuit performance was enhanced thanks to the layout optimization of transformer-based neutralization networks, and the improved operation was confirmed in the W-band. The neutralization technique was implemented in four stages with a 0.1-μm gallium arsenide (GaAs) pseudomorphic high-electron-mobility-transistor monolithic microwave integrated circuit LNA. The LNA showed small signal gains of 20.3 dB and 21.7 dB and noise figures of 5.0 dB and 6.4 dB (at 84 GHz and 96 GHz, respectively) while consuming 46 mW from a 1-V supply.

Topik & Kata Kunci

Electrical engineering. Electronics. Nuclear engineering Electricity and magnetism

Penulis (7)

Taejoo Sim

Dong-min Lee

Wansik Kim

Kichul Kim

Jeung Won Choi

Min-Su Kim

Junghyun Kim

Format Sitasi

APA MLA BibTeX

Sim, T., Lee, D., Kim, W., Kim, K., Choi, J.W., Kim, M. et al. (2023). High-Q Transformer Neutralization Technique for W-Band Dual-Band LNA Using 0.1 μm GaAs pHEMT Technology. https://doi.org/10.26866/jees.2023.6.r.193

Akses Cepat

Lihat di Sumber doi.org/10.26866/jees.2023.6.r.193

Informasi Jurnal

Tahun Terbit: 2023
Sumber Database: DOAJ
DOI: 10.26866/jees.2023.6.r.193
Akses: Open Access ✓