Effect of Deposition Potential on Preparation and Corrosion Resistance of SiO2 Film on Copper
Abstrak
The silanization of metal surface is a new and environmental anti-corrosion technology. SiO2 film has been prepared on copper by an electrochemically-assisted deposition technology using tetraethoxysilane as a silane reagent in this research. The effect of deposition potential on structure and performance of SiO2 film were also studied. The results indicate that SiO2 is the main component of the deposited films. As the deposition potential changes from -1.0V to -1.5V, the value of SiO2 content, film deposition rate and film thickness all increase first and then decrease. When the deposition potential is -1.4V, the deposition rate of SiO2 film is the fastest (1.13×10-5g·cm-2·s-1) and this film is also the thickest (69.1 μm). Moreover, the prepared SiO2 film has obvious barrier property and can improve the corrosion resistance of the Cu substrate.
Topik & Kata Kunci
Penulis (7)
Fan Qin
Li Jiang
Pengming Long
Shuting Xu
Yujia Ling
Yundan Yu
Guoying Wei
Akses Cepat
- Tahun Terbit
- 2020
- Sumber Database
- DOAJ
- DOI
- 10.20964/2020.07.49
- Akses
- Open Access ✓