DOAJ Open Access 2022

Numerical Simulation Analysis on a Composite Edge Terminal Reverse Blocking IGBT

Lei CUI Tong YANG Ruliang ZHANG Li MA Yichen LI

Abstrak

Insulated gate bipolar transistor (IGBT) is usually used in combination with power diode in power electric circuit because it has no reverse blocking ability. In order to reduce cost and parasitic inductance, the freewheeling diode and IGBT are integrated by process method, and a reverse blocking insulated gate bipolar transistor (RB-IGBT) is thus proposed. For reducing the terminal area of conventional reverse blocking IGBT, an improved composite terminal structure is proposed. The double doped field limiting ring is used to introduce a n-type low doping region near the p-type field limiting ring, which can reduce the lateral expansion rate of depletion region, increase device reliability, improve terminal efficiency and save terminal size.

Topik & Kata Kunci

Electricity Production of electric energy or power. Powerplants. Central stations

Penulis (5)

Lei CUI

Tong YANG

Ruliang ZHANG

Li MA

Yichen LI

Format Sitasi

APA MLA BibTeX

CUI, L., YANG, T., ZHANG, R., MA, L., LI, Y. (2022). Numerical Simulation Analysis on a Composite Edge Terminal Reverse Blocking IGBT. https://doi.org/10.11930/j.issn.1004-9649.202011058

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Informasi Jurnal

Tahun Terbit: 2022
Sumber Database: DOAJ
DOI: 10.11930/j.issn.1004-9649.202011058
Akses: Open Access ✓