DOAJ Open Access 2021

Analysis and Test of Reverse Recovery Performance of Fast Recovery Diode in IGCT-MMC

Yantao LOU Xiaoping SUN Qi LIU Wenpeng ZHOU Biao ZHAO +2 lainnya

Abstrak

The reverse recovery characteristics of the diode plays an important role in IGCT-MMC. This paper firstly introduces the reverse recovery characteristics of the fast recovery diode. Then the switching behaviors of the fast recovery diode in the IGCT-MMC topology are analyzed. Finally a double-pulse experimental platform is built for IGCT-MMC testing, and the reverse recovery characteristics of three commercial fast recovery diode products are compared. The test results show that the reverse recovery peak current and power of the fast recovery diode have a linear relationship with di/dt, and the testing result at high temperature are higher than that at room temperature. While under the same di/dt and temperature conditions, different fast recovery diodes have different reverse recovery peak currents and powers in IGCT-MMC. As a result, it is necessary to choose a suitable di/dt according to the safe working area of the diode in IGCT-MMC.

Topik & Kata Kunci

Electricity Production of electric energy or power. Powerplants. Central stations

Penulis (7)

Yantao LOU

Xiaoping SUN

Qi LIU

Wenpeng ZHOU

Biao ZHAO

Zhanqing YU

Rong ZENG

Format Sitasi

APA MLA BibTeX

LOU, Y., SUN, X., LIU, Q., ZHOU, W., ZHAO, B., YU, Z. et al. (2021). Analysis and Test of Reverse Recovery Performance of Fast Recovery Diode in IGCT-MMC. https://doi.org/10.11930/j.issn.1004-9649.202005037

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Informasi Jurnal

Tahun Terbit: 2021
Sumber Database: DOAJ
DOI: 10.11930/j.issn.1004-9649.202005037
Akses: Open Access ✓