Recent research progress of single particle effect of SiC MOSFET

With the rapid development of nuclear energy and space technology, application of high-voltage power devices based on SiC, especially the SiC MOSFET, is increasing. The problems of single event effect (SEE) caused by high-energy particle radiation in the radiation environment, such as, single event burnout (SEB) and single event gate rupture (SEGR), are becoming more and more prominent. In order to systematically understand the research progress of SiC MOSFET SEE, and accelerate the research of SiC MOSFET SEE mechanism and its radiation hardening technologies, the advantages of SiC MOSFET and the key problems in its radiation application are first demonstrated. Then, the simulation calculation, irradiation experiment and corresponding research results of SiC MOSFET SEE at home and abroad are comprehensively reviewed, and the main focus of related research is summarized. In addition, the possible reasons for the high sensitivity of SiC MOSFET to SEE is analyzed. Finally, possible future research directions of SiC MOSFET SEE are discussed according to current existing problems in this field. By systematically summarizing the research progress of SiC MOSFET SEE worldwide, it is expected to provide valuable reference for fully revealing the physical mechanism of SiC MOSFET SEE, and even further improving the radiation hardening technologies of SiC MOSFET to prevent the problem from SEE.