DOAJ Open Access 2021

Crystallization behavior of ion beam sputtered HfO2 thin films and its effect on the laser-induced damage threshold

Zoltán Balogh-Michels Igor Stevanovic Aurelio Borzi Andreas Bächli Daniel Schachtler +4 lainnya

Abstrak

Abstract In this work, we present our results about the thermal crystallization of ion beam sputtered hafnia on 0001 SiO2 substrates and its effect on the laser-induced damage threshold (LIDT). The crystallization process was studied using in-situ X-ray diffractometry. We determined an activation energy for crystallization of 2.6 ± 0.5 eV. It was found that the growth of the crystallites follows a two-dimensional growth mode. This, in combination with the high activation energy, leads to an apparent layer thickness-dependent crystallization temperature. LIDT measurements @355 nm on thermally treated 3 quarter-wave thick hafnia layers show a decrement of the 0% LIDT for 1 h @773 K treatment. Thermal treatment for 5 h leads to a significant increment of the LIDT values.

Topik & Kata Kunci

Applied optics. Photonics Optics. Light

Penulis (9)

Zoltán Balogh-Michels

Igor Stevanovic

Aurelio Borzi

Andreas Bächli

Daniel Schachtler

Thomas Gischkat

Antonia Neels

Alexander Stuck

Roelene Botha

Format Sitasi

APA MLA BibTeX

Balogh-Michels, Z., Stevanovic, I., Borzi, A., Bächli, A., Schachtler, D., Gischkat, T. et al. (2021). Crystallization behavior of ion beam sputtered HfO2 thin films and its effect on the laser-induced damage threshold. https://doi.org/10.1186/s41476-021-00147-w

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Informasi Jurnal

Tahun Terbit: 2021
Sumber Database: DOAJ
DOI: 10.1186/s41476-021-00147-w
Akses: Open Access ✓