DOAJ Open Access 2021

Cryogenic Floating-Gate CMOS Circuits for Quantum Control

Jennifer Hasler Neil Dick Kushal Das Brian Degnan Alireza Moini +1 lainnya

Abstrak

Voltage biases are often required to bias Qubits, and yet applying a static bias requires separate chip wires, dramatically increasing the system complexity. An ideal approach would be having a nonvolatile digital or analog memory to avoid these issues. This article shows floating-gate (FG) structures could be used to set and forget potentials and tunnel barrier tuning as well as enable memory applications. It reports FG measurements at cryogenic temperatures (T = 4 K), enabling reprogrammable FG devices in cryogenic environments. Using a multipurpose FG test structure, measurements show the FG device and circuit operation as well as charge programming measurements based on electron tunneling and hot-electron injection at T = 4 K and T = 300 K. These results open applications in classical cryogenic computing, controlling quantum computation, and other cryogenic temperature applications.

Topik & Kata Kunci

Atomic physics. Constitution and properties of matter Materials of engineering and construction. Mechanics of materials

Penulis (6)

Jennifer Hasler

Neil Dick

Kushal Das

Brian Degnan

Alireza Moini

David Reilly

Format Sitasi

APA MLA BibTeX

Hasler, J., Dick, N., Das, K., Degnan, B., Moini, A., Reilly, D. (2021). Cryogenic Floating-Gate CMOS Circuits for Quantum Control. https://doi.org/10.1109/TQE.2021.3067996

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Informasi Jurnal

Tahun Terbit: 2021
Sumber Database: DOAJ
DOI: 10.1109/TQE.2021.3067996
Akses: Open Access ✓