DOAJ Open Access 2025

Impact of Ge Substrate Thicknesses and Epitaxy Growth Conditions on the Optical and Material Properties of Ge- and GaAs-Based VCSELs

Wenhan Dong Zeyu Wan Yun-Cheng Yang Chao-Hsin Wu Yiwen Zhang +2 lainnya

Abstrak

A comparative study is presented on the dependence of optical and material properties of VCSELs on Ge and GaAs substrate thicknesses as well as epitaxy process conditions. It was found that adjusting the Ge substrate thickness and optimizing the epitaxy process can shift the stopband center and cavity resonance wavelength by several nanometers. Ge-based VCSELs exhibit improved epitaxial uniformity, smaller deviations from design specifications, reduced stoichiometry variations, and strain magnitudes comparable to those of GaAs-based counterparts. In the selected 46.92 μm2 sample area, no defects were observed in the quantum well (QW) regions of Ge-based VCSELs, and the threading dislocation density (TDD) was measured to be below 2.13 × 106 cm−2. These results highlight the potential of Ge substrates as promising candidates for advanced VCSELs.

Topik & Kata Kunci

Applied optics. Photonics Optics. Light

Penulis (7)

Wenhan Dong

Zeyu Wan

Yun-Cheng Yang

Chao-Hsin Wu

Yiwen Zhang

Rui-Tao Wen

Guangrui Xia

Format Sitasi

APA MLA BibTeX

Dong, W., Wan, Z., Yang, Y., Wu, C., Zhang, Y., Wen, R. et al. (2025). Impact of Ge Substrate Thicknesses and Epitaxy Growth Conditions on the Optical and Material Properties of Ge- and GaAs-Based VCSELs. https://doi.org/10.1109/JPHOT.2025.3627564

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Informasi Jurnal

Tahun Terbit: 2025
Sumber Database: DOAJ
DOI: 10.1109/JPHOT.2025.3627564
Akses: Open Access ✓