DOAJ Open Access 2024

Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits

Hsin-Yu Liu Donghao Zhang Zhongying Zhang Chaohsu Lai Zongmin Lin +4 lainnya

Abstrak

In this study, Green MicroLEDs with different H<sub>2</sub> flow during the barrier growth are investigated. We observe that the Indium composition near V-pits affects potential barrier height of the sidewall multiple quantum wells (MQWs) thus has strong impact on screening effect of V-pits. EQE and relative IQE has a dramatically increase with more hydrogen flow during barrier growth, and thermal endurance and wavelength stability was also improved. The enhancement has been confirmed to come from the reduction of non-radiative recombination centers from small V-pits and higher potential barrier height on sidewall MQWs in V-shaped pits which screen dislocations (TDs). These results demonstrate the advantages of modification H<sub>2</sub> flow during barrier growth and also provide a new concept to modulate potential barrier height of the sidewall MQWs for better screening effect for further improvement on MicroLEDs performance.

Topik & Kata Kunci

Applied optics. Photonics Optics. Light

Penulis (9)

Hsin-Yu Liu

Donghao Zhang

Zhongying Zhang

Chaohsu Lai

Zongmin Lin

Chia-En Lee

Lijun Bao

Sheng-Po Chang

Shoou-Jinn Chang

Format Sitasi

APA MLA BibTeX

Liu, H., Zhang, D., Zhang, Z., Lai, C., Lin, Z., Lee, C. et al. (2024). Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits. https://doi.org/10.1109/JPHOT.2024.3386111

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