DOAJ Open Access 2023

Interface Scattering as a Nonlocal Transport Phenomenon in Semiconductors

M. G. Ancona S. J. Cooke

Abstrak

Macroscopically non-local effects are common in electron transport in semiconductor devices, occurring whenever the mean free path and/or the deBroglie wavelength are not small compared to geometry/flow length scales. When such effects are important, standard diffusion-drift (DD) theory becomes inaccurate and in need of revision, with the best known example being density-gradient (DG) theory wherein a gradient term is added to the electron gas equation of state to approximate the effect of quantum non-locality. Here we consider a similarly motivated gradient correction to the electron-lattice interaction that accounts for non-locality in the transport physics. Versions of DD and DG theory with this correction are discussed, and then are applied to the analysis of long-channel field-effect transistors where they are found to provide a physics-based approach for modeling and understanding interface scattering.

Topik & Kata Kunci

Electrical engineering. Electronics. Nuclear engineering

Penulis (2)

M. G. Ancona

S. J. Cooke

Format Sitasi

APA MLA BibTeX

Ancona, M.G., Cooke, S.J. (2023). Interface Scattering as a Nonlocal Transport Phenomenon in Semiconductors. https://doi.org/10.1109/JEDS.2023.3238475

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Informasi Jurnal

Tahun Terbit: 2023
Sumber Database: DOAJ
DOI: 10.1109/JEDS.2023.3238475
Akses: Open Access ✓