DOAJ Open Access 2019

Dynamic Behavior Improvement of Normally-Off p-GaN High-Electron-Mobility Transistor Through a Low-Temperature Microwave Annealing Process

Hsien-Chin Chiu Chia-Hao Liu Yi-Sheng Chang Hsuan-Ling Kao Rong Xuan +2 lainnya

Abstrak

The surface morphology optimization of ohmic contacts and the Mg out-diffusion suppression of normally off p-GaN gate high-electron-mobility transistors (HEMTs) continue to be challenges in the power electronics industry in terms of the high-frequency switching efficiency. In this study, better current density and reliable dynamic behaviors of p-GaN gate HEMTs were obtained simultaneously by adopting low-temperature microwave annealing (MWA) for the first time. Moreover, HEMTs fabricated using MWA have a higher ION/IOF ratio and lower gate leakage current than the HEMTs fabricated using rapid thermal annealing. Due to the local heating effect, a direct path for electron flow can be formed between the two-dimensional electron gas and the ohmic metals with low bulges surface. Moreover, the Mg out-diffusion of p-GaN gate layer was also suppressed to maintain good current density and low interface traps.

Topik & Kata Kunci

Electrical engineering. Electronics. Nuclear engineering

Penulis (7)

Hsien-Chin Chiu

Chia-Hao Liu

Yi-Sheng Chang

Hsuan-Ling Kao

Rong Xuan

Chih-Wei Hu

Feng-Tso Chien

Format Sitasi

APA MLA BibTeX

Chiu, H., Liu, C., Chang, Y., Kao, H., Xuan, R., Hu, C. et al. (2019). Dynamic Behavior Improvement of Normally-Off p-GaN High-Electron-Mobility Transistor Through a Low-Temperature Microwave Annealing Process. https://doi.org/10.1109/JEDS.2019.2941519

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Informasi Jurnal

Tahun Terbit: 2019
Sumber Database: DOAJ
DOI: 10.1109/JEDS.2019.2941519
Akses: Open Access ✓