DOAJ Open Access 2024

Semimetallization induced Hall anomaly in doped polymers

Zean Guo Jiawei Wang Mengmeng Li Yawei Lv Nianduan Lu +4 lainnya

Abstrak

Hall anomaly related to deviations in Hall carrier concentrations have always been recognized as signs of charge incoherence in organic semiconductors, which lack ordered lattices. In this paper, we show that the Hall carrier concentration anomaly in doped polymers might be a result of semimetallization. Based on the observation of semimetal-like states, a dual-channel model, in which electrons and holes compensate the Hall voltages of each other, is employed to account for the anomaly. Observations of possible nonlinear Hall effect and temperature dependent Hall signs further support the origin of Hall anomaly from semimetal states.

Topik & Kata Kunci

Penulis (9)

Z

Zean Guo

J

Jiawei Wang

M

Mengmeng Li

Y

Yawei Lv

N

Nianduan Lu

C

Chong Bi

Y

Yeliang Wang

L

Ling Li

M

Ming Liu

Format Sitasi

Guo, Z., Wang, J., Li, M., Lv, Y., Lu, N., Bi, C. et al. (2024). Semimetallization induced Hall anomaly in doped polymers. https://doi.org/10.1103/PhysRevResearch.6.043180

Akses Cepat

Informasi Jurnal
Tahun Terbit
2024
Sumber Database
DOAJ
DOI
10.1103/PhysRevResearch.6.043180
Akses
Open Access ✓