Voltage-controlled Hubbard spin transistor
Abstrak
Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single electron spins. Going beyond classical spintronics, it enables the controlling of the flow of quantum information between distant spin qubits. The transistor has two modes of operation, open and closed, which are realized by two different charge configurations in the gate of the transistor. In the closed mode, the spin information between source and drain is blocked while in the open mode we have free spin information exchange. The switching between the modes takes place within a fraction of the operation time which allows for several subsequent operations within the coherence time of the transistor. The system shows good resilience against several imperfections and opens up a practical application for quantum dot arrays.
Topik & Kata Kunci
Penulis (3)
Rozhin Yousefjani
Sougato Bose
Abolfazl Bayat
Akses Cepat
PDF tidak tersedia langsung
Cek di sumber asli →- Tahun Terbit
- 2021
- Sumber Database
- DOAJ
- DOI
- 10.1103/PhysRevResearch.3.043142
- Akses
- Open Access ✓