DOAJ Open Access 2024

Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO x gate

Lior Shani Pim Lueb Gavin Menning Mohit Gupta Colin Riggert +9 lainnya

Abstrak

Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable quantum transport regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work, we consider both aspects. We developed InSb NW with thin diameters, as well as a novel gating approach, involving few-layer graphene and atomic layer deposition-grown AlO _x . Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry–Pérot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices.

Topik & Kata Kunci

Atomic physics. Constitution and properties of matter Materials of engineering and construction. Mechanics of materials

Penulis (14)

Lior Shani

Pim Lueb

Gavin Menning

Mohit Gupta

Colin Riggert

Tyler Littmann

Frey Hackbarth

Marco Rossi

Jason Jung

Ghada Badawy

Marcel A Verheijen

Paul A Crowell

Erik P A M Bakkers

Vlad S Pribiag

Format Sitasi

APA MLA BibTeX

Shani, L., Lueb, P., Menning, G., Gupta, M., Riggert, C., Littmann, T. et al. (2024). Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO x gate. https://doi.org/10.1088/2633-4356/ad2d6b

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Informasi Jurnal

Tahun Terbit: 2024
Sumber Database: DOAJ
DOI: 10.1088/2633-4356/ad2d6b
Akses: Open Access ✓