In situ Al2O3 passivation of epitaxial tantalum and aluminum films enables long-term stability in superconducting microwave resonators

Long-term stability of superconducting microwave resonators is essential for scalable quantum technologies; however, surface and interface degradation continue to limit device stability. Here, we demonstrate exceptional stability in microstrip resonators fabricated from epitaxial tantalum and aluminum films, protected by in situ deposited Al2O3 under ultrahigh vacuum. These resonators initially exhibit internal quality factors (Qi) exceeding 106 and maintain high performance with minimal degradation even after fourteen months of air exposure. In contrast, devices relying on native surface oxides show substantial declines in Qi over time, indicating increased microwave losses. X-ray photoelectron spectroscopy reveals that the in situ Al2O3 effectively suppresses interfacial oxidation and preserves the chemical integrity of the underlying superconducting films, whereas native oxides permit progressive oxidation, leading to device degradation. These findings establish a robust, scalable passivation strategy that addresses a longstanding materials challenge in the development of superconducting quantum circuits.