Modeling correlated-noise in silicon spin qubit device

Silicon-based spin qubit platform is a promising candidate for the hardware realization of quantum computing. Charge noise, however, plays a critical role in limiting the fidelity and scalability of silicon-based quantum computing technologies. This work presents Green’s transfer function approach to simulate the correlated noise power spectral density (PSD) in silicon spin qubit devices. The simulation approach relates the dynamics of the charge noise source of two-level fluctuators (TLFs) to the correlated noise of spin qubit device characteristics through a transfer function. It allows the noise auto-correlation and cross correlation between any pairs of physical quantities of interest to be systematically computed and analyzed. Because each spin qubit device involves only a small number of TLFs due to its nanoscale device size, the distribution of TLFs impacts the noise correlation significantly. In both a two-qubit quantum gate and a spin qubit array device, the charge noise shows strong cross correlation between neighboring qubits. The simulation results also reveal a phase-flipping feature of the noise cross-PSD between neighboring spin qubits, consistent with a recent experiment.