DOAJ Open Access 2024

Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates

Weiyi Jin Yumin Zhang Songyuan Xia Qizhi Zhu Yuanhang Sun +3 lainnya

Abstrak

This study investigates leakage mechanisms in vertical GaN-on-GaN Schottky barrier diodes (SBDs) and demonstrates effective mitigation strategies. The fabricated devices exhibit low reverse leakage current (1 × 10−5 A/cm2 at −200 V) and a high Ion/Ioff ratio (∼1010), surpassing the performance of GaN SBDs on foreign substrates. We elucidate dominant leakage mechanisms—thermionic emission, Poole–Frenkel emission, and variable-range hopping—and their evolution with temperature and bias. Optimized fabrication processes, including defect etching and a novel dual-layer passivation technique, achieve over a 1000-fold reduction in leakage current.

Topik & Kata Kunci

Physics

Penulis (8)

Weiyi Jin

Yumin Zhang

Songyuan Xia

Qizhi Zhu

Yuanhang Sun

Juemin Yi

Jianfeng Wang

Ke Xu

Format Sitasi

APA MLA BibTeX

Jin, W., Zhang, Y., Xia, S., Zhu, Q., Sun, Y., Yi, J. et al. (2024). Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates. https://doi.org/10.1063/5.0208706

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Informasi Jurnal

Tahun Terbit: 2024
Sumber Database: DOAJ
DOI: 10.1063/5.0208706
Akses: Open Access ✓