DOAJ Open Access 2022

Magnetic tunnel junctions using epitaxially grown FeAlSi electrode with soft magnetic property

Shoma Akamatsu Mikihiko Oogane Masakiyo Tsunoda Yasuo Ando

Abstrak

Magnetic tunnel junctions (MTJs) with (001)-oriented D03-FeAlSi epitaxial films, which have both soft magnetic properties and surface flatness, were fabricated and characterized. A tunnel magnetoresistance (TMR) ratio of 121% was observed, and a relatively low switching field was also confirmed, reflecting the soft magnetic property of FeAlSi. However, the results of the cross-sectional TEM image of the MTJ and the bias dependence of the TMR ratio indicate that the FeAlSi/MgO interface is probably oxidized. Therefore, since an insertion layer at the interface can suppress oxidation and further improve the TMR ratio, MTJs using FeAlSi epitaxial films are promising structures suitable for applications such as MTJ-based magnetic sensors and worthy of further investigation.

Topik & Kata Kunci

Physics

Penulis (4)

Shoma Akamatsu

Mikihiko Oogane

Masakiyo Tsunoda

Yasuo Ando

Format Sitasi

APA MLA BibTeX

Akamatsu, S., Oogane, M., Tsunoda, M., Ando, Y. (2022). Magnetic tunnel junctions using epitaxially grown FeAlSi electrode with soft magnetic property. https://doi.org/10.1063/5.0094619

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Informasi Jurnal

Tahun Terbit: 2022
Sumber Database: DOAJ
DOI: 10.1063/5.0094619
Akses: Open Access ✓