DOAJ Open Access 2022

Optically pumped deep-UV multimode lasing in AlGaN double heterostructure grown by molecular beam homoepitaxy

Len van Deurzen Ryan Page Vladimir Protasenko Kazuki Nomoto Huili (Grace) Xing +1 lainnya

Abstrak

Multimode lasing at sub-300 nm wavelengths is demonstrated by optical pumping in AlGaN heterostructures grown on single-crystal AlN substrates by plasma-assisted molecular beam epitaxy. Edge-emitting ridge-based Fabry–Pérot cavities are fabricated with the epitaxial AlN/AlGaN double heterostructure by a combined inductively coupled plasma reactive ion etch and tetramethylammonium hydroxide etch. The emitters exhibit peak gain at 284 nm and modal linewidths on the order of 0.1 nm at room temperature. The applied growth technique and its chemical and heterostructural design characteristics offer certain unique capabilities toward further development of electrically injected AlGaN laser diodes.

Topik & Kata Kunci

Physics

Penulis (6)

Len van Deurzen

Ryan Page

Vladimir Protasenko

Kazuki Nomoto

Huili (Grace) Xing

Debdeep Jena

Format Sitasi

APA MLA BibTeX

Deurzen, L.v., Page, R., Protasenko, V., Nomoto, K., Xing, H.(., Jena, D. (2022). Optically pumped deep-UV multimode lasing in AlGaN double heterostructure grown by molecular beam homoepitaxy. https://doi.org/10.1063/5.0085365

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Informasi Jurnal

Tahun Terbit: 2022
Sumber Database: DOAJ
DOI: 10.1063/5.0085365
Akses: Open Access ✓