Memoryless non‐linearity in B‐Substitution doped and undoped graphene FETs: A comparative investigation

Abstract An accurate electrical equivalent circuit model for boron‐substitution doped graphene field effect transistor (GFET) is proposed to analyse the effects of memoryless non‐linearity on transconductance. The proposed equivalent circuit model is verified with the simulated results of an industry‐standard circuit simulation tool. The fundamental figures of merit (FOMs), such as the second‐ and third‐order harmonic distortion terms (HD2 and HD3), gain compression point (Ain,1dB), second‐ and third‐order intermodulation distortion terms (IM2 and IM3), and second‐ and third‐order input intercept points (AIIP2 and AIIP3) are mathematically modelled for B‐substitution doped GFET to examine the linear behaviour of the device. The expressions are validated by performing the single tone and double tone simulation test to the proposed equivalent circuit model using the industry‐standard circuit simulator. The proposed model is compatible and predicts accurate results for both B‐substitution doped and undoped GFET. The simulation results are having an excellent agreement with the mathematical model, which are also compared with the undoped GFET and conventional MOSFET. It is also observed that by B‐substitution doping the graphene sheet significantly induces the bandgapt and hence enhances the linear behaviour of the B‐substitution doped GFET and promises highly desirable linearity requirement in the analog/RF applications.