DOAJ Open Access 2020

Giant Seebeck effect across the field-induced metal-insulator transition of InAs

Alexandre Jaoui Gabriel Seyfarth Carl Willem Rischau Steffen Wiedmann Siham Benhabib +3 lainnya

Abstrak

Abstract Lightly doped III–V semiconductor InAs is a dilute metal, which can be pushed beyond its extreme quantum limit upon the application of a modest magnetic field. In this regime, a Mott-Anderson metal–insulator transition, triggered by the magnetic field, leads to a depletion of carrier concentration by more than one order of magnitude. Here, we show that this transition is accompanied by a 200-fold enhancement of the Seebeck coefficient, which becomes as large as 11.3 mV K−1 $$\approx 130\frac{{k}_{B}}{e}$$ ≈ 130 k B e at T = 8 K and B = 29 T. We find that the magnitude of this signal depends on sample dimensions and conclude that it is caused by phonon drag, resulting from a large difference between the scattering time of phonons (which are almost ballistic) and electrons (which are almost localized in the insulating state). Our results reveal a path to distinguish between possible sources of large thermoelectric response in other low-density systems pushed beyond the quantum limit.

Topik & Kata Kunci

Materials of engineering and construction. Mechanics of materials Atomic physics. Constitution and properties of matter

Penulis (8)

Alexandre Jaoui

Gabriel Seyfarth

Carl Willem Rischau

Steffen Wiedmann

Siham Benhabib

Cyril Proust

Kamran Behnia

Benoît Fauqué

Format Sitasi

APA MLA BibTeX

Jaoui, A., Seyfarth, G., Rischau, C.W., Wiedmann, S., Benhabib, S., Proust, C. et al. (2020). Giant Seebeck effect across the field-induced metal-insulator transition of InAs. https://doi.org/10.1038/s41535-020-00296-0

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Informasi Jurnal

Tahun Terbit: 2020
Sumber Database: DOAJ
DOI: 10.1038/s41535-020-00296-0
Akses: Open Access ✓