DOAJ Open Access 2025

400V SiC MOSFET empowering three-level topologies for highly efficient applications from motor-drives to AI

Ralf Siemieniec Martin Wattenberg Ertugrul Kocaaga Sriram Jagannath Elvir Kahrimanovic +3 lainnya

Abstrak

The introduction of 400 V SiC MOSFET technology bridges the voltage range gap between 200 V medium-voltage MOSFETs and 600 V super-junction MOSFETs. This technology is characterized by low switching losses and low on-state resistance, making it suitable for 2-level topologies in 120 VAC or 300 VDC systems or 3-level topologies with typical input voltages ranging from 180 VAC to 350 VAC or 400 VDC to 600 VDC.The technology concept is presented, and its efficiency and power density gains are demonstrated through measurements on test boards representing a 3-level ANPC general purpose inverter and a 3-level FC PFC for highly-efficient power supplies.

Topik & Kata Kunci

Electric apparatus and materials. Electric circuits. Electric networks

Penulis (8)

Ralf Siemieniec

Martin Wattenberg

Ertugrul Kocaaga

Sriram Jagannath

Elvir Kahrimanovic

Jyotshna Bhandari

Heejae Shim

Alberto Pignatelli

Format Sitasi

APA MLA BibTeX

Siemieniec, R., Wattenberg, M., Kocaaga, E., Jagannath, S., Kahrimanovic, E., Bhandari, J. et al. (2025). 400V SiC MOSFET empowering three-level topologies for highly efficient applications from motor-drives to AI. https://doi.org/10.1016/j.pedc.2025.100104

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Informasi Jurnal

Tahun Terbit: 2025
Sumber Database: DOAJ
DOI: 10.1016/j.pedc.2025.100104
Akses: Open Access ✓