DOAJ Open Access 2025

Monolithic integration of circuits in e-mode GaN HEMT technology

Plinio Bau Thanh Hai Phung Stephane Driussi Thomas Beauchene

Abstrak

This work presents a power transistor with monolithically integrated gate driver and auxiliary circuit in the same GaN-on-Si die. It presents the design, the characterization and validation tests in a PCB similarly to a final application for this device. The target application is for USB-C chargers and power supplies for data centers. The technology is 650 V pGaN with Schottky gate. Simulation from -40 to 150 °C are performed and also fabrication process variation analysis (SS, FF) compared to typical values (TT).

Topik & Kata Kunci

Electric apparatus and materials. Electric circuits. Electric networks

Penulis (4)

Plinio Bau

Thanh Hai Phung

Stephane Driussi

Thomas Beauchene

Format Sitasi

APA MLA BibTeX

Bau, P., Phung, T.H., Driussi, S., Beauchene, T. (2025). Monolithic integration of circuits in e-mode GaN HEMT technology. https://doi.org/10.1016/j.pedc.2025.100089

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Informasi Jurnal

Tahun Terbit: 2025
Sumber Database: DOAJ
DOI: 10.1016/j.pedc.2025.100089
Akses: Open Access ✓